Progress in MBE grown type-II superlattice photodiodes

Cory J. Hill, Jian V. Li, Jason M. Mumolo, Sarath D. Gunapala

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12μm range. Recent devices have produced detectivities as high as 8×1010 Jones with a differential resistance-area product greater than 6 Ohmcm2 at 80K with a long wavelength cutoff of approximately 12μm. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11 μn range without antireflection coatings.

Original languageEnglish
Title of host publicationInfrared Technology and Applications XXXII
DOIs
Publication statusPublished - 2006
EventInfrared Technology and Applications XXXII - Kissimmee, FL, United States
Duration: 2006 Apr 172006 Apr 21

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6206 I
ISSN (Print)0277-786X

Other

OtherInfrared Technology and Applications XXXII
CountryUnited States
CityKissimmee, FL
Period06-04-1706-04-21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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