We report progress in the development of long wavelength infrared (LWIR) focal plane arrays (FPAs) built on type-II strained layer InAs/GaSb superlattice materials. Work at Raytheon Vision Systems and Jet Propulsion Laboratory has led to successful devices with cutoff wavelengths in the 10 to 12 um range. Pixels have been formed by wet etching and surface passivation by plasma-deposited silicon dioxide. We present test results on arrays hybridized with indium bump bonding to silicon readout integrated circuits, as well as analyses of current-voltage characteristics of individual diodes. In particular, we find that, at temperatures below about 70 K the leakage current is dominated by generationrecombination effects near zero bias and by trap-assisted tunneling in reverse bias. Although other authors have demonstrated imaging for SWIR and MWIR type-II superlattice devices, to our knowledge no one has done so prior to 2006 in the LWIR range. We have obtained both still and video imaging with 256×256 arrays with 30-μm pixels operating at 78 K, having high operability and a cutoff wavelength of 10.5 μm.