Properties and devices of SiGe heterostructures and superlattices

Kang L. Wang; R. P.G. Karunasiri

Properties and devices of SiGe heterostructures and superlattices

Kang L. Wang, R. P.G. Karunasiri

College of Electrical Engineering and Computer Science

Research output: Contribution to conference › Paper › peer-review

Abstract

Several successful techniques for growth of pseudomorphic strained Ge_xSi_1-x layers on Si are briefly reviewed. The properties of the strained layers that affect the device design and performance are discussed. Devices based on the material are also discussed, with emphasis on heterojunction bipolar transistors (HBTs). High gain and high cutoff frequency has been predicted. Other advances, including the demonstration of tunneling structures, quantum well structures, and devices based on band-aligned superlattices, are presented. The growth of monolayer Ge_mSi_n superlattices is discussed as well as the concept of Brillouin zone-folding and the formation of quasi-direct bandgaps.

Original language	English
Pages	129-140
Number of pages	12
Publication status	Published - 1989
Event	Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA Duration: 1989 Aug 7 → 1989 Aug 9

Other

Other	Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
City	Ithaca, NY, USA
Period	89-08-07 → 89-08-09

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Properties and devices of SiGe heterostructures and superlattices",

abstract = "Several successful techniques for growth of pseudomorphic strained GexSi1-x layers on Si are briefly reviewed. The properties of the strained layers that affect the device design and performance are discussed. Devices based on the material are also discussed, with emphasis on heterojunction bipolar transistors (HBTs). High gain and high cutoff frequency has been predicted. Other advances, including the demonstration of tunneling structures, quantum well structures, and devices based on band-aligned superlattices, are presented. The growth of monolayer GemSin superlattices is discussed as well as the concept of Brillouin zone-folding and the formation of quasi-direct bandgaps.",

author = "Wang, {Kang L.} and Karunasiri, {R. P.G.}",

note = "Copyright: Copyright 2004 Elsevier B.V., All rights reserved.; Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ; Conference date: 07-08-1989 Through 09-08-1989",

year = "1989",

language = "English",

pages = "129--140",

}

TY - CONF

T1 - Properties and devices of SiGe heterostructures and superlattices

AU - Wang, Kang L.

AU - Karunasiri, R. P.G.

PY - 1989

Y1 - 1989

N2 - Several successful techniques for growth of pseudomorphic strained GexSi1-x layers on Si are briefly reviewed. The properties of the strained layers that affect the device design and performance are discussed. Devices based on the material are also discussed, with emphasis on heterojunction bipolar transistors (HBTs). High gain and high cutoff frequency has been predicted. Other advances, including the demonstration of tunneling structures, quantum well structures, and devices based on band-aligned superlattices, are presented. The growth of monolayer GemSin superlattices is discussed as well as the concept of Brillouin zone-folding and the formation of quasi-direct bandgaps.

AB - Several successful techniques for growth of pseudomorphic strained GexSi1-x layers on Si are briefly reviewed. The properties of the strained layers that affect the device design and performance are discussed. Devices based on the material are also discussed, with emphasis on heterojunction bipolar transistors (HBTs). High gain and high cutoff frequency has been predicted. Other advances, including the demonstration of tunneling structures, quantum well structures, and devices based on band-aligned superlattices, are presented. The growth of monolayer GemSin superlattices is discussed as well as the concept of Brillouin zone-folding and the formation of quasi-direct bandgaps.

UR - http://www.scopus.com/inward/record.url?scp=0024915768&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024915768&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0024915768

SP - 129

EP - 140

T2 - Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Y2 - 7 August 1989 through 9 August 1989

ER -

Properties and devices of SiGe heterostructures and superlattices

Abstract

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All Science Journal Classification (ASJC) codes

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