Properties and devices of SiGe heterostructures and superlattices

Kang L. Wang, R. P.G. Karunasiri

Research output: Contribution to conferencePaperpeer-review

Abstract

Several successful techniques for growth of pseudomorphic strained GexSi1-x layers on Si are briefly reviewed. The properties of the strained layers that affect the device design and performance are discussed. Devices based on the material are also discussed, with emphasis on heterojunction bipolar transistors (HBTs). High gain and high cutoff frequency has been predicted. Other advances, including the demonstration of tunneling structures, quantum well structures, and devices based on band-aligned superlattices, are presented. The growth of monolayer GemSin superlattices is discussed as well as the concept of Brillouin zone-folding and the formation of quasi-direct bandgaps.

Original languageEnglish
Pages129-140
Number of pages12
Publication statusPublished - 1989
EventProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1989 Aug 71989 Aug 9

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period89-08-0789-08-09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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