Carbon nitride (CNx) films have been deposited in a hollow cathode arc (HCA) ion plating system with a high-density plasma, including a high degree of dissociation of nitrogen. Optical emission spectra (OES) were obtained to characterize the Ar/N2 plasma during the deposition of carbon nitride films. The species identified include C2, N2, N+2 and CN. The variations of the OES spectra with pressure are correlated with film growth behavior. The films deposited on Si (100) substrates were characterized by FTIR, Raman, and SEM. Single, double and triple carbon nitride bonds were detected in the FTIR spectra, and the relative intensities of the associated bands were dependent on the pressure and the substrate bias. Raman spectra showed an increase of the sp2 carbon phase in carbon nitride films with the increase of pressure and the substrate bias. The internal stresses were measured by substrate bending using the Stoney equation. The internal stress of carbon nitride films was observed to depend mainly on the substrate bias.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering