Properties of Cu/Au Schottky contacts on InGaP layer

Day Shan Liu; Ching Ting Lee; Ching Wu Wang

doi:10.1063/1.1602574

Properties of Cu/Au Schottky contacts on InGaP layer

Day Shan Liu, Ching Ting Lee, Ching Wu Wang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A study was performed on the properties of Cu/Au Schottky contacts on InGaP layer. The Auger electron spectroscopy (AES) measurements was used to obtain elemental distributions for Cu/Au Schottky contacts to an InGaP layer in as-deposited and thermally annealed samples. It was found that when the annealing temperature reached 500 °C, the metallic Cu layer was released, and a distinct interdiffusion between the Cu and the InGaP layers was observed.

Original language	English
Pages (from-to)	3805-3809
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.1602574
Publication status	Published - 2003 Sept 15

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1602574

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title = "Properties of Cu/Au Schottky contacts on InGaP layer",

abstract = "A study was performed on the properties of Cu/Au Schottky contacts on InGaP layer. The Auger electron spectroscopy (AES) measurements was used to obtain elemental distributions for Cu/Au Schottky contacts to an InGaP layer in as-deposited and thermally annealed samples. It was found that when the annealing temperature reached 500 °C, the metallic Cu layer was released, and a distinct interdiffusion between the Cu and the InGaP layers was observed.",

author = "Liu, {Day Shan} and Lee, {Ching Ting} and Wang, {Ching Wu}",

year = "2003",

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AU - Liu, Day Shan

AU - Lee, Ching Ting

AU - Wang, Ching Wu

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AB - A study was performed on the properties of Cu/Au Schottky contacts on InGaP layer. The Auger electron spectroscopy (AES) measurements was used to obtain elemental distributions for Cu/Au Schottky contacts to an InGaP layer in as-deposited and thermally annealed samples. It was found that when the annealing temperature reached 500 °C, the metallic Cu layer was released, and a distinct interdiffusion between the Cu and the InGaP layers was observed.

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JF - Journal of Applied Physics

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ER -

Properties of Cu/Au Schottky contacts on InGaP layer

Abstract

All Science Journal Classification (ASJC) codes

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