Properties of Cu/Au Schottky contacts on InGaP layer

Day Shan Liu, Ching Ting Lee, Ching Wu Wang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A study was performed on the properties of Cu/Au Schottky contacts on InGaP layer. The Auger electron spectroscopy (AES) measurements was used to obtain elemental distributions for Cu/Au Schottky contacts to an InGaP layer in as-deposited and thermally annealed samples. It was found that when the annealing temperature reached 500 °C, the metallic Cu layer was released, and a distinct interdiffusion between the Cu and the InGaP layers was observed.

Original languageEnglish
Pages (from-to)3805-3809
Number of pages5
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 2003 Sep 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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