A study was performed on the properties of Cu/Au Schottky contacts on InGaP layer. The Auger electron spectroscopy (AES) measurements was used to obtain elemental distributions for Cu/Au Schottky contacts to an InGaP layer in as-deposited and thermally annealed samples. It was found that when the annealing temperature reached 500 °C, the metallic Cu layer was released, and a distinct interdiffusion between the Cu and the InGaP layers was observed.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)