The effects of operating temperature and thickness of gate dielectric on the electrical characteristics of a GaAs MOSFET have been investigated. We fabricated the GaAs MOSFET using Ga2O3(As2O3) as the gate dielectric prepared by a liquid-phase chemically enhanced oxidation method. By reducing the temperature from 150°C to -50°C, the transconductance can be enhanced about 100% for a 1 μm gate-length MOSFET with oxide thickness of 35 nm. An increasing trend of transconductance can also be observed by reducing the gate-oxide thickness. In addition, the short-circuit current gain cutoff frequency fT and the maximum oscillation frequency fmax as a function of temperature and gate-oxide thickness are discussed for different values of gate length.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry