Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method

Jau Yi Wu, Po Wen Sze, Yu Min Deng, Guo Wei Huang, Yeong-Her Wang, Mau-phon Houng

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of operating temperature and thickness of gate dielectric on the electrical characteristics of a GaAs MOSFET have been investigated. We fabricated the GaAs MOSFET using Ga2O3(As2O3) as the gate dielectric prepared by a liquid-phase chemically enhanced oxidation method. By reducing the temperature from 150°C to -50°C, the transconductance can be enhanced about 100% for a 1 μm gate-length MOSFET with oxide thickness of 35 nm. An increasing trend of transconductance can also be observed by reducing the gate-oxide thickness. In addition, the short-circuit current gain cutoff frequency fT and the maximum oscillation frequency fmax as a function of temperature and gate-oxide thickness are discussed for different values of gate length.

Original languageEnglish
Pages (from-to)635-638
Number of pages4
JournalSolid-State Electronics
Volume45
Issue number5
DOIs
Publication statusPublished - 2001 May 1

Fingerprint

Gate dielectrics
Oxides
liquid phases
field effect transistors
Transconductance
Oxidation
oxidation
Liquids
Cutoff frequency
transconductance
Short circuit currents
Temperature
oxides
short circuit currents
operating temperature
gallium arsenide
cut-off
trends
oscillations
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Wu, Jau Yi ; Sze, Po Wen ; Deng, Yu Min ; Huang, Guo Wei ; Wang, Yeong-Her ; Houng, Mau-phon. / Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method. In: Solid-State Electronics. 2001 ; Vol. 45, No. 5. pp. 635-638.
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Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method. / Wu, Jau Yi; Sze, Po Wen; Deng, Yu Min; Huang, Guo Wei; Wang, Yeong-Her; Houng, Mau-phon.

In: Solid-State Electronics, Vol. 45, No. 5, 01.05.2001, p. 635-638.

Research output: Contribution to journalArticle

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AU - Wu, Jau Yi

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AU - Houng, Mau-phon

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AB - The effects of operating temperature and thickness of gate dielectric on the electrical characteristics of a GaAs MOSFET have been investigated. We fabricated the GaAs MOSFET using Ga2O3(As2O3) as the gate dielectric prepared by a liquid-phase chemically enhanced oxidation method. By reducing the temperature from 150°C to -50°C, the transconductance can be enhanced about 100% for a 1 μm gate-length MOSFET with oxide thickness of 35 nm. An increasing trend of transconductance can also be observed by reducing the gate-oxide thickness. In addition, the short-circuit current gain cutoff frequency fT and the maximum oscillation frequency fmax as a function of temperature and gate-oxide thickness are discussed for different values of gate length.

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