Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method

Jau Yi Wu, Po Wen Sze, Yu Min Deng, Guo Wei Huang, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of operating temperature and thickness of gate dielectric on the electrical characteristics of a GaAs MOSFET have been investigated. We fabricated the GaAs MOSFET using Ga2O3(As2O3) as the gate dielectric prepared by a liquid-phase chemically enhanced oxidation method. By reducing the temperature from 150°C to -50°C, the transconductance can be enhanced about 100% for a 1 μm gate-length MOSFET with oxide thickness of 35 nm. An increasing trend of transconductance can also be observed by reducing the gate-oxide thickness. In addition, the short-circuit current gain cutoff frequency fT and the maximum oscillation frequency fmax as a function of temperature and gate-oxide thickness are discussed for different values of gate length.

Original languageEnglish
Pages (from-to)635-638
Number of pages4
JournalSolid-State Electronics
Volume45
Issue number5
DOIs
Publication statusPublished - 2001 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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