Properties of GaAs Oxides Prepared by Liquid Phase Chemical-Enhanced Technique

Hwei Heng Wang; Dei Wei Chou; Yeong Her Wang; Mau Phon Houng

Properties of GaAs Oxides Prepared by Liquid Phase Chemical-Enhanced Technique

Hwei Heng Wang, Dei Wei Chou, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journal › Article › peer-review

Abstract

The properties of GaAs oxides prepared by liquid phase chemical-enhanced oxidation (LPCEO) technique are investigated. The refractive indices of the oxide films appear to increase with oxidation time, and can be well controlled by the oxidation procedures. It has been found that the accumulation of As compounds within the oxides is the origin for the phenomena. Based on the current-voltage (I-V) characteristics of the metal-oxide-semiconductor (MOS) structures, the leakage current density of the oxide has been demonstrated to be low (∼2 × 10^-8 A/cm²), and a high dielectric breakdown strength of ∼8MV/cm is achieved. Finally, the complete chemical compositions from the oxide surface to the oxide-substrate interface has been determined by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) depth profiles.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Physica Scripta T
Volume	79
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

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title = "Properties of GaAs Oxides Prepared by Liquid Phase Chemical-Enhanced Technique",

abstract = "The properties of GaAs oxides prepared by liquid phase chemical-enhanced oxidation (LPCEO) technique are investigated. The refractive indices of the oxide films appear to increase with oxidation time, and can be well controlled by the oxidation procedures. It has been found that the accumulation of As compounds within the oxides is the origin for the phenomena. Based on the current-voltage (I-V) characteristics of the metal-oxide-semiconductor (MOS) structures, the leakage current density of the oxide has been demonstrated to be low (∼2 × 10-8 A/cm2), and a high dielectric breakdown strength of ∼8MV/cm is achieved. Finally, the complete chemical compositions from the oxide surface to the oxide-substrate interface has been determined by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) depth profiles.",

author = "Wang, {Hwei Heng} and Chou, {Dei Wei} and Wang, {Yeong Her} and Houng, {Mau Phon}",

year = "1999",

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pages = "239--242",

journal = "Physica Scripta T",

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T1 - Properties of GaAs Oxides Prepared by Liquid Phase Chemical-Enhanced Technique

AU - Wang, Hwei Heng

AU - Chou, Dei Wei

AU - Wang, Yeong Her

AU - Houng, Mau Phon

PY - 1999

Y1 - 1999

N2 - The properties of GaAs oxides prepared by liquid phase chemical-enhanced oxidation (LPCEO) technique are investigated. The refractive indices of the oxide films appear to increase with oxidation time, and can be well controlled by the oxidation procedures. It has been found that the accumulation of As compounds within the oxides is the origin for the phenomena. Based on the current-voltage (I-V) characteristics of the metal-oxide-semiconductor (MOS) structures, the leakage current density of the oxide has been demonstrated to be low (∼2 × 10-8 A/cm2), and a high dielectric breakdown strength of ∼8MV/cm is achieved. Finally, the complete chemical compositions from the oxide surface to the oxide-substrate interface has been determined by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) depth profiles.

AB - The properties of GaAs oxides prepared by liquid phase chemical-enhanced oxidation (LPCEO) technique are investigated. The refractive indices of the oxide films appear to increase with oxidation time, and can be well controlled by the oxidation procedures. It has been found that the accumulation of As compounds within the oxides is the origin for the phenomena. Based on the current-voltage (I-V) characteristics of the metal-oxide-semiconductor (MOS) structures, the leakage current density of the oxide has been demonstrated to be low (∼2 × 10-8 A/cm2), and a high dielectric breakdown strength of ∼8MV/cm is achieved. Finally, the complete chemical compositions from the oxide surface to the oxide-substrate interface has been determined by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) depth profiles.

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Properties of GaAs Oxides Prepared by Liquid Phase Chemical-Enhanced Technique

Abstract

All Science Journal Classification (ASJC) codes

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