Properties of GaAs Oxides Prepared by Liquid Phase Chemical-Enhanced Technique

Hwei Heng Wang, Dei Wei Chou, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The properties of GaAs oxides prepared by liquid phase chemical-enhanced oxidation (LPCEO) technique are investigated. The refractive indices of the oxide films appear to increase with oxidation time, and can be well controlled by the oxidation procedures. It has been found that the accumulation of As compounds within the oxides is the origin for the phenomena. Based on the current-voltage (I-V) characteristics of the metal-oxide-semiconductor (MOS) structures, the leakage current density of the oxide has been demonstrated to be low (∼2 × 10-8 A/cm2), and a high dielectric breakdown strength of ∼8MV/cm is achieved. Finally, the complete chemical compositions from the oxide surface to the oxide-substrate interface has been determined by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) depth profiles.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalPhysica Scripta T
Publication statusPublished - 1999

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics


Dive into the research topics of 'Properties of GaAs Oxides Prepared by Liquid Phase Chemical-Enhanced Technique'. Together they form a unique fingerprint.

Cite this