Properties of Halide Perovskite Photodetectors with Little Rubidium Incorporation

This study investigates the effects of Rb doping on the Rb-formamidinium-methylammonium-PbI₃ based perovskite photodetectors. Rb was incorporated in the perovskite films with different contents, and the corresponding photo-response properties were studied. Doping of few Rb (~2.5%) was found to greatly increase the grain size and the absorbance of the perovskite. However, when the Rb content was greater than 2.5%, clustering of the Rb-rich phases emerged, the band gap decreased, and additional absorption band edge was found. The excess Rb-rich phases were the main cause that degraded the performance of the photodetectors. By space charge limit current analyses, the Rb was found to passivate the defects in the perovskite, lowering the leakage current and reducing the trap densities of carriers. This fact was used to explain the increase in the detectivity. To clarify the effect of Rb, the photovoltaic properties were measured. Similarly, h perovskite with 2.5% Rb doping increased the short-circuit current, revealing the decline of the internal defects. The 2.5% Rb doped photodetector showed the best performance with responsivity of 0.28 AW⁻¹ and ~50% quantum efficiency. Detectivity as high as 4.6 × 10¹¹ Jones was obtained, owing to the improved crystallinity and reduced defects.