Properties of indium molybdenum oxide films fabricated via high-density plasma evaporation at room temperature

Shi Yao Sun, Jow Lay Huang, Ding Fwu Lii

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In2 O3/MoO3 target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2MoIn) Oi]x dominated at high doping content and high oxygen content, whereas ionized complex MoIn•••Oi ] dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 × 10-4 Ω cm (corresponding to a mobility of 14.6 cm2V-1s-1 and carrier concentration of 14.3 × 1020 cm-3) and average visible transmittance of ∼85% were produced at an optimum oxygen content of ∼9%. Average optical transmittance exceeding 80% was demonstrated, and a structural change appeared at low oxygen contents.

Original languageEnglish
Pages (from-to)247-255
Number of pages9
JournalJournal of Materials Research
Volume20
Issue number1
DOIs
Publication statusPublished - 2005 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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