Properties of indium molybdenum oxide films fabricated via high-density plasma evaporation at room temperature

Shi Yao Sun; Jow Lay Huang; Ding Fwu Lii

doi:10.1557/JMR.2005.0031

Properties of indium molybdenum oxide films fabricated via high-density plasma evaporation at room temperature

Shi Yao Sun
, Jow Lay Huang
, Ding Fwu Lii

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In₂ O₃/MoO₃ target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2Mo_In^•) O_i^″]^x dominated at high doping content and high oxygen content, whereas ionized complex Mo_In^•••O_i ^″ ] ^• dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 × 10^-4 Ω cm (corresponding to a mobility of 14.6 cm²V^-1s^-1 and carrier concentration of 14.3 × 10²⁰ cm^-3) and average visible transmittance of ∼85% were produced at an optimum oxygen content of ∼9%. Average optical transmittance exceeding 80% was demonstrated, and a structural change appeared at low oxygen contents.

Original language	English
Pages (from-to)	247-255
Number of pages	9
Journal	Journal of Materials Research
Volume	20
Issue number	1
DOIs	https://doi.org/10.1557/JMR.2005.0031
Publication status	Published - 2005 Jan

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/JMR.2005.0031

Cite this

@article{52bbb3bc61bd42a4b14dcc7d3f97b179,

title = "Properties of indium molybdenum oxide films fabricated via high-density plasma evaporation at room temperature",

abstract = "The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In2 O3/MoO3 target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2MoIn•) Oi″]x dominated at high doping content and high oxygen content, whereas ionized complex MoIn•••Oi ″ ] • dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 × 10-4 Ω cm (corresponding to a mobility of 14.6 cm2V-1s-1 and carrier concentration of 14.3 × 1020 cm-3) and average visible transmittance of ∼85\% were produced at an optimum oxygen content of ∼9\%. Average optical transmittance exceeding 80\% was demonstrated, and a structural change appeared at low oxygen contents.",

author = "Sun, \{Shi Yao\} and Huang, \{Jow Lay\} and Lii, \{Ding Fwu\}",

year = "2005",

month = jan,

doi = "10.1557/JMR.2005.0031",

language = "English",

volume = "20",

pages = "247--255",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing AG",

number = "1",

}

TY - JOUR

T1 - Properties of indium molybdenum oxide films fabricated via high-density plasma evaporation at room temperature

AU - Sun, Shi Yao

AU - Huang, Jow Lay

AU - Lii, Ding Fwu

PY - 2005/1

Y1 - 2005/1

N2 - The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In2 O3/MoO3 target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2MoIn•) Oi″]x dominated at high doping content and high oxygen content, whereas ionized complex MoIn•••Oi ″ ] • dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 × 10-4 Ω cm (corresponding to a mobility of 14.6 cm2V-1s-1 and carrier concentration of 14.3 × 1020 cm-3) and average visible transmittance of ∼85% were produced at an optimum oxygen content of ∼9%. Average optical transmittance exceeding 80% was demonstrated, and a structural change appeared at low oxygen contents.

AB - The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In2 O3/MoO3 target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2MoIn•) Oi″]x dominated at high doping content and high oxygen content, whereas ionized complex MoIn•••Oi ″ ] • dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 × 10-4 Ω cm (corresponding to a mobility of 14.6 cm2V-1s-1 and carrier concentration of 14.3 × 1020 cm-3) and average visible transmittance of ∼85% were produced at an optimum oxygen content of ∼9%. Average optical transmittance exceeding 80% was demonstrated, and a structural change appeared at low oxygen contents.

UR - https://www.scopus.com/pages/publications/22144462904

UR - https://www.scopus.com/pages/publications/22144462904#tab=citedBy

U2 - 10.1557/JMR.2005.0031

DO - 10.1557/JMR.2005.0031

M3 - Article

AN - SCOPUS:22144462904

SN - 0884-2914

VL - 20

SP - 247

EP - 255

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 1

ER -

Properties of indium molybdenum oxide films fabricated via high-density plasma evaporation at room temperature

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this