Properties of interfaces in Cu/Ti1-xAlxN/〈Si〉 multilayers

Ding Fwu Lii, Jow Lay Huang, Jenn Fuh Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)


Ti1-xAlxN films have been grown onto Si(1 0 0) substrate by d.c. reactive magnetron sputtering as a diffusion barrier between Cu and Si. The residual stresses of Ti1-xAlxN films depended on the microstructure and composition. Higher residual stresses were obtained for Ti1-xAlxN films deposited with higher bias voltage. The minimum residual stress was 11.4 MPa, found in Ti1-xAlxN films deposited with a nitrogen flow rate of 8 ml/min and a bias voltage of -50 V. Residual stresses of Cu films decreased with the increase of surface roughness of the Ti1-xAlxN films. The good adhesion of Ti1-xAlxN films on Si substrate was due to the chemical reactions, however, the bad adhesion of Cu films on Ti1-xAlxN films was attributed to the large residual tensile stresses in Cu film.

Original languageEnglish
Pages (from-to)115-123
Number of pages9
JournalSurface and Coatings Technology
Issue number1
Publication statusPublished - 2003 Jan 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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