Properties of p-GaAs/sawtooth doping superlattice/n+-GaAs structure prepared by molecular beam epitaxy

Chung Yih Sun; Wen Chau Liu

doi:10.1063/1.105871

Properties of p-GaAs/sawtooth doping superlattice/n⁺-GaAs structure prepared by molecular beam epitaxy

Chung Yih Sun
, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The transport properties of a p-GaAs/sawtooth doping superlattice (SDS)/n⁺-GaAs structure has been studied. It is known that the transport properties vary with temperature. Experimentally, a diode-like performance is obtained, due to the thermionic emission, at room temperature. However, a quite different S-shaped negative-differential-resistance (NDR) phenomenon, resulting primarily from the avalanche multiplication in the SDS region, is observed at 77 K. The existence of different performance modes, i.e., diode and switch, on the same wafer chip provides more flexibility for device and circuit applications.

Original language	English
Pages (from-to)	2823-2825
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	22
DOIs	https://doi.org/10.1063/1.105871
Publication status	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.105871

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title = "Properties of p-GaAs/sawtooth doping superlattice/n+-GaAs structure prepared by molecular beam epitaxy",

abstract = "The transport properties of a p-GaAs/sawtooth doping superlattice (SDS)/n+-GaAs structure has been studied. It is known that the transport properties vary with temperature. Experimentally, a diode-like performance is obtained, due to the thermionic emission, at room temperature. However, a quite different S-shaped negative-differential-resistance (NDR) phenomenon, resulting primarily from the avalanche multiplication in the SDS region, is observed at 77 K. The existence of different performance modes, i.e., diode and switch, on the same wafer chip provides more flexibility for device and circuit applications.",

author = "Sun, \{Chung Yih\} and Liu, \{Wen Chau\}",

year = "1991",

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journal = "Applied Physics Letters",

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AU - Sun, Chung Yih

AU - Liu, Wen Chau

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Y1 - 1991

N2 - The transport properties of a p-GaAs/sawtooth doping superlattice (SDS)/n+-GaAs structure has been studied. It is known that the transport properties vary with temperature. Experimentally, a diode-like performance is obtained, due to the thermionic emission, at room temperature. However, a quite different S-shaped negative-differential-resistance (NDR) phenomenon, resulting primarily from the avalanche multiplication in the SDS region, is observed at 77 K. The existence of different performance modes, i.e., diode and switch, on the same wafer chip provides more flexibility for device and circuit applications.

AB - The transport properties of a p-GaAs/sawtooth doping superlattice (SDS)/n+-GaAs structure has been studied. It is known that the transport properties vary with temperature. Experimentally, a diode-like performance is obtained, due to the thermionic emission, at room temperature. However, a quite different S-shaped negative-differential-resistance (NDR) phenomenon, resulting primarily from the avalanche multiplication in the SDS region, is observed at 77 K. The existence of different performance modes, i.e., diode and switch, on the same wafer chip provides more flexibility for device and circuit applications.

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JF - Applied Physics Letters

IS - 22

ER -

Properties of p-GaAs/sawtooth doping superlattice/n⁺-GaAs structure prepared by molecular beam epitaxy

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