Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO4 dielectric films

Cheng Liang Huang, Cheng Hsing Hsu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The properties of the ZnO doped Zr0.8Sn0.2TiO 4 thin films on n-type silicon substrates were studied at different Ar/O2 ratios and substrate temperatures. The role played by Ar/O 2 ratio and substrate temperature on the crystal structure and dielectric properties of ZST films were also studied. Using selected area diffraction, it was found that the deposited films exhibited a polycrystalline microstructure. All the films were found to exhibit ZST (111) orientation perpendicular to the substrate surface, while the grain size and the deposition rate of the films were found to increase with the increase of both the Ar partial pressure and the substrate temperature.

Original languageEnglish
Pages (from-to)1186-1191
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number2
DOIs
Publication statusPublished - 2004 Jul 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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