Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO4 dielectric films

Cheng Liang Huang; Cheng Hsing Hsu

doi:10.1063/1.1759085

Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO₄ dielectric films

Cheng Liang Huang, Cheng Hsing Hsu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The properties of the ZnO doped Zr_0.8Sn_0.2TiO ₄ thin films on n-type silicon substrates were studied at different Ar/O₂ ratios and substrate temperatures. The role played by Ar/O ₂ ratio and substrate temperature on the crystal structure and dielectric properties of ZST films were also studied. Using selected area diffraction, it was found that the deposited films exhibited a polycrystalline microstructure. All the films were found to exhibit ZST (111) orientation perpendicular to the substrate surface, while the grain size and the deposition rate of the films were found to increase with the increase of both the Ar partial pressure and the substrate temperature.

Original language	English
Pages (from-to)	1186-1191
Number of pages	6
Journal	Journal of Applied Physics
Volume	96
Issue number	2
DOIs	https://doi.org/10.1063/1.1759085
Publication status	Published - 2004 Jul 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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abstract = "The properties of the ZnO doped Zr0.8Sn0.2TiO 4 thin films on n-type silicon substrates were studied at different Ar/O2 ratios and substrate temperatures. The role played by Ar/O 2 ratio and substrate temperature on the crystal structure and dielectric properties of ZST films were also studied. Using selected area diffraction, it was found that the deposited films exhibited a polycrystalline microstructure. All the films were found to exhibit ZST (111) orientation perpendicular to the substrate surface, while the grain size and the deposition rate of the films were found to increase with the increase of both the Ar partial pressure and the substrate temperature.",

author = "Huang, {Cheng Liang} and Hsu, {Cheng Hsing}",

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N2 - The properties of the ZnO doped Zr0.8Sn0.2TiO 4 thin films on n-type silicon substrates were studied at different Ar/O2 ratios and substrate temperatures. The role played by Ar/O 2 ratio and substrate temperature on the crystal structure and dielectric properties of ZST films were also studied. Using selected area diffraction, it was found that the deposited films exhibited a polycrystalline microstructure. All the films were found to exhibit ZST (111) orientation perpendicular to the substrate surface, while the grain size and the deposition rate of the films were found to increase with the increase of both the Ar partial pressure and the substrate temperature.

AB - The properties of the ZnO doped Zr0.8Sn0.2TiO 4 thin films on n-type silicon substrates were studied at different Ar/O2 ratios and substrate temperatures. The role played by Ar/O 2 ratio and substrate temperature on the crystal structure and dielectric properties of ZST films were also studied. Using selected area diffraction, it was found that the deposited films exhibited a polycrystalline microstructure. All the films were found to exhibit ZST (111) orientation perpendicular to the substrate surface, while the grain size and the deposition rate of the films were found to increase with the increase of both the Ar partial pressure and the substrate temperature.

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Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO₄ dielectric films

Abstract

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