The properties of the ZnO doped Zr0.8Sn0.2TiO 4 thin films on n-type silicon substrates were studied at different Ar/O2 ratios and substrate temperatures. The role played by Ar/O 2 ratio and substrate temperature on the crystal structure and dielectric properties of ZST films were also studied. Using selected area diffraction, it was found that the deposited films exhibited a polycrystalline microstructure. All the films were found to exhibit ZST (111) orientation perpendicular to the substrate surface, while the grain size and the deposition rate of the films were found to increase with the increase of both the Ar partial pressure and the substrate temperature.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2004 Jul 15|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)