Properties of the GaAs oxide layer grown by the liquid-phase chemical-enhanced technique on the S-passivated GaAs surface

Dei Wei Chou, Ruey F.A. Lou, Hwei Heng Wang, Yeong-Her Wang, Mau-phon Houng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The properties of GaAs oxide layers prepared by liquid-phase chemical-enhanced oxidation of the (NH4)2S x-passivated GaAs surface are investigated. The initial oxidation rate is suppressed and the refractive indices of oxide layers are lower after S passivation. In accordance with the depth profiles measured by secondary ion mass spectroscopy (SIMS), a model is proposed to illustrate the chemical composition of the oxide layer grown by liquid-phase chemical-enhanced oxidation after S passivation. Oxidation following different surface treatments was studied by analyzing their activation energies. In addition, we find that the leakage current and the breakdown electric field of oxide layers can be improved significantly with the passivation technique.

Original languageEnglish
Pages (from-to)70-75
Number of pages6
JournalJournal of Electronic Materials
Volume31
Issue number1
Publication statusPublished - 2002 Jan 1

Fingerprint

Oxides
liquid phases
Passivation
passivity
Oxidation
oxidation
oxides
Liquids
surface treatment
Leakage currents
Surface treatment
Refractive index
chemical composition
leakage
mass spectroscopy
Activation energy
breakdown
Electric fields
Spectroscopy
Ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "The properties of GaAs oxide layers prepared by liquid-phase chemical-enhanced oxidation of the (NH4)2S x-passivated GaAs surface are investigated. The initial oxidation rate is suppressed and the refractive indices of oxide layers are lower after S passivation. In accordance with the depth profiles measured by secondary ion mass spectroscopy (SIMS), a model is proposed to illustrate the chemical composition of the oxide layer grown by liquid-phase chemical-enhanced oxidation after S passivation. Oxidation following different surface treatments was studied by analyzing their activation energies. In addition, we find that the leakage current and the breakdown electric field of oxide layers can be improved significantly with the passivation technique.",
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Properties of the GaAs oxide layer grown by the liquid-phase chemical-enhanced technique on the S-passivated GaAs surface. / Chou, Dei Wei; Lou, Ruey F.A.; Wang, Hwei Heng; Wang, Yeong-Her; Houng, Mau-phon.

In: Journal of Electronic Materials, Vol. 31, No. 1, 01.01.2002, p. 70-75.

Research output: Contribution to journalArticle

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AU - Chou, Dei Wei

AU - Lou, Ruey F.A.

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AU - Houng, Mau-phon

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