Properties of the GaAs pseudo heterojunction bipolar transistor

K. F. Yarn; K. L. Lew; Y. H. Wang; M. P. Houng

doi:10.1080/08827510410001694833

Properties of the GaAs pseudo heterojunction bipolar transistor

K. F. Yarn, K. L. Lew, Y. H. Wang, M. P. Houng

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate a GaAs pseudo heterojunction bipolar transistor (HBT) with theoretical model and experimental results. Comparison between experimental data and theoretical calculations with conventional BJTs are made. The frequency performances of the device and dependence of cut-off frequency on spacer layer thickness are also discussed.

Original language	English
Pages (from-to)	19-27
Number of pages	9
Journal	International Journal of Electronics
Volume	93
Issue number	1
DOIs	https://doi.org/10.1080/08827510410001694833
Publication status	Published - 2006 Jan 1

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1080/08827510410001694833

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title = "Properties of the GaAs pseudo heterojunction bipolar transistor",

abstract = "We demonstrate a GaAs pseudo heterojunction bipolar transistor (HBT) with theoretical model and experimental results. Comparison between experimental data and theoretical calculations with conventional BJTs are made. The frequency performances of the device and dependence of cut-off frequency on spacer layer thickness are also discussed.",

author = "Yarn, {K. F.} and Lew, {K. L.} and Wang, {Y. H.} and Houng, {M. P.}",

year = "2006",

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AU - Lew, K. L.

AU - Wang, Y. H.

AU - Houng, M. P.

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Y1 - 2006/1/1

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AB - We demonstrate a GaAs pseudo heterojunction bipolar transistor (HBT) with theoretical model and experimental results. Comparison between experimental data and theoretical calculations with conventional BJTs are made. The frequency performances of the device and dependence of cut-off frequency on spacer layer thickness are also discussed.

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JO - International Journal of Electronics

JF - International Journal of Electronics

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Properties of the GaAs pseudo heterojunction bipolar transistor

Abstract

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