Properties of the GaAs pseudo heterojunction bipolar transistor

K. F. Yarn, K. L. Lew, Yeong-Her Wang, Mau-phon Houng

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate a GaAs pseudo heterojunction bipolar transistor (HBT) with theoretical model and experimental results. Comparison between experimental data and theoretical calculations with conventional BJTs are made. The frequency performances of the device and dependence of cut-off frequency on spacer layer thickness are also discussed.

Original languageEnglish
Pages (from-to)19-27
Number of pages9
JournalInternational Journal of Electronics
Volume93
Issue number1
DOIs
Publication statusPublished - 2006 Jan 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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