Properties of ultrafast laser textured silicon for photovoltaics

Vikram V. Iyengar, Barada K. Nayak, Karren L. More, Harry M. Meyer, Michael D. Biegalski, Jian V. Li, Mool C. Gupta

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)

Abstract

In this work, we report a detailed material study of ultrafast laser textured silicon surfaces to gain insight into the impact of ultrafast laser processing conditions on photovoltaic device properties. A comprehensive study of the ultrafast laser processed silicon is achieved by determination of crystal structure and elemental compositional changes using transmission electron microscopy, compositional mapping by energy dispersive X-ray spectroscopy and depth profiling compositional determination using X-ray photoelectron spectroscopy. We have observed material non-homogeneity, impurity incorporation and strained silicon, all limited to the surface. A combination of chemical etching and thermal annealing was used to remove the laser induced changes and the material was restored to its starting quality. Further, silicon solar cell devices on such defect-etched surfaces are fabricated. These devices are characterized through dark iv analysis and Fourier transform deep level transient spectroscopy for defect analysis.

Original languageEnglish
Pages (from-to)2745-2751
Number of pages7
JournalSolar Energy Materials and Solar Cells
Volume95
Issue number10
DOIs
Publication statusPublished - 2011 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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