Properties of ZnO-doped Zr0.8Sn0.2TiO4 thin films by rf sputtering

Cheng-Liang Huang, Cheng Shing Hsu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Electrical properties and microstructures of ZnO-doped Zr0.8Sn0.2TiO4 thin films prepared by rf magnetron sputtering were investigated. The surface structural and morphological characteristics were investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The x-ray photoelectron spectroscopy results showed a molecular orbital that affected the chemical structure.

Original languageEnglish
Pages (from-to)670-676
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number2
Publication statusPublished - 2003 Mar 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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