Properties of ZnO-doped Zr0.8Sn0.2TiO4 thin films by rf sputtering

Cheng-Liang Huang; Cheng Shing Hsu

Properties of ZnO-doped Zr_0.8Sn_0.2TiO₄ thin films by rf sputtering

Cheng-Liang Huang, Cheng Shing Hsu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Electrical properties and microstructures of ZnO-doped Zr_0.8Sn_0.2TiO₄ thin films prepared by rf magnetron sputtering were investigated. The surface structural and morphological characteristics were investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The x-ray photoelectron spectroscopy results showed a molecular orbital that affected the chemical structure.

Original language	English
Pages (from-to)	670-676
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	2
Publication status	Published - 2003 Mar 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

Fingerprint Dive into the research topics of 'Properties of ZnO-doped Zr0.8Sn0.2TiO4 thin films by rf sputtering'. Together they form a unique fingerprint.

Cite this

@article{fc0c35b3d6aa4f7fbd6cc813c7284a80,

title = "Properties of ZnO-doped Zr0.8Sn0.2TiO4 thin films by rf sputtering",

abstract = "Electrical properties and microstructures of ZnO-doped Zr0.8Sn0.2TiO4 thin films prepared by rf magnetron sputtering were investigated. The surface structural and morphological characteristics were investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The x-ray photoelectron spectroscopy results showed a molecular orbital that affected the chemical structure.",

author = "Cheng-Liang Huang and Hsu, {Cheng Shing}",

year = "2003",

month = mar,

day = "1",

language = "English",

volume = "21",

pages = "670--676",

journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Properties of ZnO-doped Zr0.8Sn0.2TiO4 thin films by rf sputtering

AU - Huang, Cheng-Liang

AU - Hsu, Cheng Shing

PY - 2003/3/1

Y1 - 2003/3/1

N2 - Electrical properties and microstructures of ZnO-doped Zr0.8Sn0.2TiO4 thin films prepared by rf magnetron sputtering were investigated. The surface structural and morphological characteristics were investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The x-ray photoelectron spectroscopy results showed a molecular orbital that affected the chemical structure.

AB - Electrical properties and microstructures of ZnO-doped Zr0.8Sn0.2TiO4 thin films prepared by rf magnetron sputtering were investigated. The surface structural and morphological characteristics were investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The x-ray photoelectron spectroscopy results showed a molecular orbital that affected the chemical structure.

UR - http://www.scopus.com/inward/record.url?scp=0037274038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037274038&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037274038

VL - 21

SP - 670

EP - 676

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 2

ER -