Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures

D. R. Sahu; Jow Lay Huang

doi:10.1016/j.mejo.2007.01.012

Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures

D. R. Sahu, Jow Lay Huang

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

ZnO/Cu/ZnO transparent conductive multilayer films are prepared by simultaneous RF sputtering of ZnO and DC sputtering of Cu. The properties of the multilayer films are studied at different substrate temperatures. Sheet resistance of the multilayer film decreased initially with increase of substrate temperature and increased further with increase of substrate temperature beyond 100 °C. However, transmittance of the multilayer film increased with increase of substrate temperature. Good transparent conductive film of sheet resistance 9.3 Ω/sq and transmittance of 85% was found at a substrate temperature of 100 °C. The performance of the multilayer film was evaluated using a figure of merit. The observed property of the multilayer film is suitable for the application of transparent conductive electrodes.

Original language	English
Pages (from-to)	299-303
Number of pages	5
Journal	Microelectronics Journal
Volume	38
Issue number	3
DOIs	https://doi.org/10.1016/j.mejo.2007.01.012
Publication status	Published - 2007 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mejo.2007.01.012

Cite this

@article{1ef1cf6b49a04b309b4b63c246ca71c3,

title = "Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures",

abstract = "ZnO/Cu/ZnO transparent conductive multilayer films are prepared by simultaneous RF sputtering of ZnO and DC sputtering of Cu. The properties of the multilayer films are studied at different substrate temperatures. Sheet resistance of the multilayer film decreased initially with increase of substrate temperature and increased further with increase of substrate temperature beyond 100 °C. However, transmittance of the multilayer film increased with increase of substrate temperature. Good transparent conductive film of sheet resistance 9.3 Ω/sq and transmittance of 85% was found at a substrate temperature of 100 °C. The performance of the multilayer film was evaluated using a figure of merit. The observed property of the multilayer film is suitable for the application of transparent conductive electrodes.",

author = "Sahu, {D. R.} and Huang, {Jow Lay}",

note = "Funding Information: The authors would like to thank the National Science Council of the ROC for its financial support under contract no. NSC-95-2120-M-006-001. ",

year = "2007",

month = mar,

doi = "10.1016/j.mejo.2007.01.012",

language = "English",

volume = "38",

pages = "299--303",

journal = "Microelectronics Journal",

issn = "0959-8324",

publisher = "Elsevier BV",

number = "3",

}

TY - JOUR

T1 - Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures

AU - Sahu, D. R.

AU - Huang, Jow Lay

N1 - Funding Information: The authors would like to thank the National Science Council of the ROC for its financial support under contract no. NSC-95-2120-M-006-001.

PY - 2007/3

Y1 - 2007/3

N2 - ZnO/Cu/ZnO transparent conductive multilayer films are prepared by simultaneous RF sputtering of ZnO and DC sputtering of Cu. The properties of the multilayer films are studied at different substrate temperatures. Sheet resistance of the multilayer film decreased initially with increase of substrate temperature and increased further with increase of substrate temperature beyond 100 °C. However, transmittance of the multilayer film increased with increase of substrate temperature. Good transparent conductive film of sheet resistance 9.3 Ω/sq and transmittance of 85% was found at a substrate temperature of 100 °C. The performance of the multilayer film was evaluated using a figure of merit. The observed property of the multilayer film is suitable for the application of transparent conductive electrodes.

AB - ZnO/Cu/ZnO transparent conductive multilayer films are prepared by simultaneous RF sputtering of ZnO and DC sputtering of Cu. The properties of the multilayer films are studied at different substrate temperatures. Sheet resistance of the multilayer film decreased initially with increase of substrate temperature and increased further with increase of substrate temperature beyond 100 °C. However, transmittance of the multilayer film increased with increase of substrate temperature. Good transparent conductive film of sheet resistance 9.3 Ω/sq and transmittance of 85% was found at a substrate temperature of 100 °C. The performance of the multilayer film was evaluated using a figure of merit. The observed property of the multilayer film is suitable for the application of transparent conductive electrodes.

UR - http://www.scopus.com/inward/record.url?scp=34147169083&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34147169083&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2007.01.012

DO - 10.1016/j.mejo.2007.01.012

M3 - Article

AN - SCOPUS:34147169083

VL - 38

SP - 299

EP - 303

JO - Microelectronics Journal

JF - Microelectronics Journal

SN - 0959-8324

IS - 3

ER -

Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this