Proximity Effect induced transport Properties between MBE grown (Bi 1-x Sb x ) 2 Se 3 Topological Insulators and Magnetic Insulator CoFe 2 O 4

Shun Yu Huang, Cheong Wei Chong, Yi Tung, Tzu Chin Chen, Ki Chi Wu, Min Kai Lee, Jung Chun Andrew Huang, Z. Li, H. Qiu

Research output: Contribution to journalArticle

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Abstract

In this study, we investigate the proximity effect in topological insulator (TI) and magnetic insulator bilayer system. (Bi 1-x Sb x ) 2 Se 3 /CoFe 2 O 4 (CFO) heterostructure was fabricated using molecular beam epitaxy and pulsed laser deposition system respectively. As revealed from the magnetoresistance measurement, the weak anti-localization (WAL) is strongly suppressed by proximity effect in (Bi 1-x Sb x ) 2 Se 3 /CFO interface. Modified Hikama-Larkin-Nagaoka equation was used to fit the WAL results so that the size of surface state gap can be extracted successfully. The temperature-dependent resistance of the heterostructures at small and large perpendicular magnetic fields were also measured and analyzed. The results indicate that the surface band gap can be induced in TI and continuously enlarged up to 9 T, indicating the gradual alignment of the magnetic moment in CFO under perpendicular magnetic field. The approaches and results accommodated in this work show that CFO can effectively magnetize (Bi 1-x Sb x ) 2 Se 3 and the heterostructures are promising for TI-based spintronic device applications.

Original languageEnglish
Article number2422
JournalScientific reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

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Magnetic Fields
Lasers
Equipment and Supplies
Temperature
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@article{4e1975960abb406a87aa0d6374c94b25,
title = "Proximity Effect induced transport Properties between MBE grown (Bi 1-x Sb x ) 2 Se 3 Topological Insulators and Magnetic Insulator CoFe 2 O 4",
abstract = "In this study, we investigate the proximity effect in topological insulator (TI) and magnetic insulator bilayer system. (Bi 1-x Sb x ) 2 Se 3 /CoFe 2 O 4 (CFO) heterostructure was fabricated using molecular beam epitaxy and pulsed laser deposition system respectively. As revealed from the magnetoresistance measurement, the weak anti-localization (WAL) is strongly suppressed by proximity effect in (Bi 1-x Sb x ) 2 Se 3 /CFO interface. Modified Hikama-Larkin-Nagaoka equation was used to fit the WAL results so that the size of surface state gap can be extracted successfully. The temperature-dependent resistance of the heterostructures at small and large perpendicular magnetic fields were also measured and analyzed. The results indicate that the surface band gap can be induced in TI and continuously enlarged up to 9 T, indicating the gradual alignment of the magnetic moment in CFO under perpendicular magnetic field. The approaches and results accommodated in this work show that CFO can effectively magnetize (Bi 1-x Sb x ) 2 Se 3 and the heterostructures are promising for TI-based spintronic device applications.",
author = "Huang, {Shun Yu} and Chong, {Cheong Wei} and Yi Tung and Chen, {Tzu Chin} and Wu, {Ki Chi} and Lee, {Min Kai} and Huang, {Jung Chun Andrew} and Z. Li and H. Qiu",
year = "2017",
month = "12",
day = "1",
doi = "10.1038/s41598-017-02662-8",
language = "English",
volume = "7",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

Proximity Effect induced transport Properties between MBE grown (Bi 1-x Sb x ) 2 Se 3 Topological Insulators and Magnetic Insulator CoFe 2 O 4 . / Huang, Shun Yu; Chong, Cheong Wei; Tung, Yi; Chen, Tzu Chin; Wu, Ki Chi; Lee, Min Kai; Huang, Jung Chun Andrew; Li, Z.; Qiu, H.

In: Scientific reports, Vol. 7, No. 1, 2422, 01.12.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Proximity Effect induced transport Properties between MBE grown (Bi 1-x Sb x ) 2 Se 3 Topological Insulators and Magnetic Insulator CoFe 2 O 4

AU - Huang, Shun Yu

AU - Chong, Cheong Wei

AU - Tung, Yi

AU - Chen, Tzu Chin

AU - Wu, Ki Chi

AU - Lee, Min Kai

AU - Huang, Jung Chun Andrew

AU - Li, Z.

AU - Qiu, H.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - In this study, we investigate the proximity effect in topological insulator (TI) and magnetic insulator bilayer system. (Bi 1-x Sb x ) 2 Se 3 /CoFe 2 O 4 (CFO) heterostructure was fabricated using molecular beam epitaxy and pulsed laser deposition system respectively. As revealed from the magnetoresistance measurement, the weak anti-localization (WAL) is strongly suppressed by proximity effect in (Bi 1-x Sb x ) 2 Se 3 /CFO interface. Modified Hikama-Larkin-Nagaoka equation was used to fit the WAL results so that the size of surface state gap can be extracted successfully. The temperature-dependent resistance of the heterostructures at small and large perpendicular magnetic fields were also measured and analyzed. The results indicate that the surface band gap can be induced in TI and continuously enlarged up to 9 T, indicating the gradual alignment of the magnetic moment in CFO under perpendicular magnetic field. The approaches and results accommodated in this work show that CFO can effectively magnetize (Bi 1-x Sb x ) 2 Se 3 and the heterostructures are promising for TI-based spintronic device applications.

AB - In this study, we investigate the proximity effect in topological insulator (TI) and magnetic insulator bilayer system. (Bi 1-x Sb x ) 2 Se 3 /CoFe 2 O 4 (CFO) heterostructure was fabricated using molecular beam epitaxy and pulsed laser deposition system respectively. As revealed from the magnetoresistance measurement, the weak anti-localization (WAL) is strongly suppressed by proximity effect in (Bi 1-x Sb x ) 2 Se 3 /CFO interface. Modified Hikama-Larkin-Nagaoka equation was used to fit the WAL results so that the size of surface state gap can be extracted successfully. The temperature-dependent resistance of the heterostructures at small and large perpendicular magnetic fields were also measured and analyzed. The results indicate that the surface band gap can be induced in TI and continuously enlarged up to 9 T, indicating the gradual alignment of the magnetic moment in CFO under perpendicular magnetic field. The approaches and results accommodated in this work show that CFO can effectively magnetize (Bi 1-x Sb x ) 2 Se 3 and the heterostructures are promising for TI-based spintronic device applications.

UR - http://www.scopus.com/inward/record.url?scp=85019718768&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019718768&partnerID=8YFLogxK

U2 - 10.1038/s41598-017-02662-8

DO - 10.1038/s41598-017-02662-8

M3 - Article

C2 - 28546637

AN - SCOPUS:85019718768

VL - 7

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 2422

ER -