Proximity-Induced Magnetic Order in a Transferred Topological Insulator Thin Film on a Magnetic Insulator

Xiaoyu Che; Koichi Murata; Lei Pan; Qing Lin He; Guoqiang Yu; Qiming Shao; Gen Yin; Peng Deng; Yabin Fan; Bo Ma; Xiao Liang; Bin Zhang; Xiaodong Han; Lei Bi; Qing Hui Yang; Huaiwu Zhang; Kang L. Wang

doi:10.1021/acsnano.8b02647

Proximity-Induced Magnetic Order in a Transferred Topological Insulator Thin Film on a Magnetic Insulator

Xiaoyu Che, Koichi Murata, Lei Pan, Qing Lin He, Guoqiang Yu, Qiming Shao, Gen Yin, Peng Deng, Yabin Fan, Bo Ma, Xiao Liang, Bin Zhang, Xiaodong Han, Lei Bi, Qing Hui Yang, Huaiwu Zhang, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Breaking the time reversal symmetry (TRS) in a topological insulator (TI) by introducing a magnetic order gives rise to exotic quantum phenomena. One of the promising routes to inducing a magnetic order in a TI is utilizing magnetic proximity effect between a TI and a strong magnetic insulator (MI). In this article, we demonstrate a TI/MI heterostructure prepared through transferring a molecular beam epitaxy (MBE)-grown Bi₂Se₃ film onto a yttrium iron garnet (YIG) substrate via wet transfer. The transferred Bi₂Se₃ exhibits excellent quality over a large scale. Moreover, through wet transfer we are able to engineer the interface and perform a comparative study to probe the proximity coupling between Bi₂Se₃ and YIG under different interface conditions. A detailed investigation of both the anomalous Hall effect and quantum corrections to the conductivity in magnetotransport measurements reveals an induced magnetic order as well as TRS breaking in the transferred Bi₂Se₃ film on YIG. In contrast, a thin layer of AlO_x at the interface obstructs the proximity coupling and preserves the TRS, indicating the critical role of the interface in mediating magnetic proximity effect.

Original language	English
Pages (from-to)	5042-5050
Number of pages	9
Journal	ACS nano
Volume	12
Issue number	5
DOIs	https://doi.org/10.1021/acsnano.8b02647
Publication status	Published - 2018 May 22

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering
General Physics and Astronomy

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10.1021/acsnano.8b02647

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@article{5af089ccd9e24673b89fa30952c930b6,

title = "Proximity-Induced Magnetic Order in a Transferred Topological Insulator Thin Film on a Magnetic Insulator",

abstract = "Breaking the time reversal symmetry (TRS) in a topological insulator (TI) by introducing a magnetic order gives rise to exotic quantum phenomena. One of the promising routes to inducing a magnetic order in a TI is utilizing magnetic proximity effect between a TI and a strong magnetic insulator (MI). In this article, we demonstrate a TI/MI heterostructure prepared through transferring a molecular beam epitaxy (MBE)-grown Bi2Se3 film onto a yttrium iron garnet (YIG) substrate via wet transfer. The transferred Bi2Se3 exhibits excellent quality over a large scale. Moreover, through wet transfer we are able to engineer the interface and perform a comparative study to probe the proximity coupling between Bi2Se3 and YIG under different interface conditions. A detailed investigation of both the anomalous Hall effect and quantum corrections to the conductivity in magnetotransport measurements reveals an induced magnetic order as well as TRS breaking in the transferred Bi2Se3 film on YIG. In contrast, a thin layer of AlOx at the interface obstructs the proximity coupling and preserves the TRS, indicating the critical role of the interface in mediating magnetic proximity effect.",

author = "Xiaoyu Che and Koichi Murata and Lei Pan and He, {Qing Lin} and Guoqiang Yu and Qiming Shao and Gen Yin and Peng Deng and Yabin Fan and Bo Ma and Xiao Liang and Bin Zhang and Xiaodong Han and Lei Bi and Yang, {Qing Hui} and Huaiwu Zhang and Wang, {Kang L.}",

note = "Funding Information: We acknowledge the support from the Army Research Office accomplished under Grant Number W911NF-16-1-0472 and W911NF-15-1-10561. We are also grateful to the support by the Spins and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under award #S000686, and the National Science Foundation (DMR-1411085). LB thanks the support from National Natural Science Foundation of China (Nos. 61475031 and 51522204). Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = may,

day = "22",

doi = "10.1021/acsnano.8b02647",

language = "English",

volume = "12",

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journal = "ACS nano",

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T1 - Proximity-Induced Magnetic Order in a Transferred Topological Insulator Thin Film on a Magnetic Insulator

AU - Che, Xiaoyu

AU - Murata, Koichi

AU - Pan, Lei

AU - He, Qing Lin

AU - Yu, Guoqiang

AU - Shao, Qiming

AU - Yin, Gen

AU - Deng, Peng

AU - Fan, Yabin

AU - Ma, Bo

AU - Liang, Xiao

AU - Zhang, Bin

AU - Han, Xiaodong

AU - Bi, Lei

AU - Yang, Qing Hui

AU - Zhang, Huaiwu

AU - Wang, Kang L.

N1 - Funding Information: We acknowledge the support from the Army Research Office accomplished under Grant Number W911NF-16-1-0472 and W911NF-15-1-10561. We are also grateful to the support by the Spins and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under award #S000686, and the National Science Foundation (DMR-1411085). LB thanks the support from National Natural Science Foundation of China (Nos. 61475031 and 51522204). Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/5/22

Y1 - 2018/5/22

N2 - Breaking the time reversal symmetry (TRS) in a topological insulator (TI) by introducing a magnetic order gives rise to exotic quantum phenomena. One of the promising routes to inducing a magnetic order in a TI is utilizing magnetic proximity effect between a TI and a strong magnetic insulator (MI). In this article, we demonstrate a TI/MI heterostructure prepared through transferring a molecular beam epitaxy (MBE)-grown Bi2Se3 film onto a yttrium iron garnet (YIG) substrate via wet transfer. The transferred Bi2Se3 exhibits excellent quality over a large scale. Moreover, through wet transfer we are able to engineer the interface and perform a comparative study to probe the proximity coupling between Bi2Se3 and YIG under different interface conditions. A detailed investigation of both the anomalous Hall effect and quantum corrections to the conductivity in magnetotransport measurements reveals an induced magnetic order as well as TRS breaking in the transferred Bi2Se3 film on YIG. In contrast, a thin layer of AlOx at the interface obstructs the proximity coupling and preserves the TRS, indicating the critical role of the interface in mediating magnetic proximity effect.

AB - Breaking the time reversal symmetry (TRS) in a topological insulator (TI) by introducing a magnetic order gives rise to exotic quantum phenomena. One of the promising routes to inducing a magnetic order in a TI is utilizing magnetic proximity effect between a TI and a strong magnetic insulator (MI). In this article, we demonstrate a TI/MI heterostructure prepared through transferring a molecular beam epitaxy (MBE)-grown Bi2Se3 film onto a yttrium iron garnet (YIG) substrate via wet transfer. The transferred Bi2Se3 exhibits excellent quality over a large scale. Moreover, through wet transfer we are able to engineer the interface and perform a comparative study to probe the proximity coupling between Bi2Se3 and YIG under different interface conditions. A detailed investigation of both the anomalous Hall effect and quantum corrections to the conductivity in magnetotransport measurements reveals an induced magnetic order as well as TRS breaking in the transferred Bi2Se3 film on YIG. In contrast, a thin layer of AlOx at the interface obstructs the proximity coupling and preserves the TRS, indicating the critical role of the interface in mediating magnetic proximity effect.

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U2 - 10.1021/acsnano.8b02647

DO - 10.1021/acsnano.8b02647

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AN - SCOPUS:85046732343

SN - 1936-0851

VL - 12

SP - 5042

EP - 5050

JO - ACS nano

JF - ACS nano

IS - 5

ER -

Proximity-Induced Magnetic Order in a Transferred Topological Insulator Thin Film on a Magnetic Insulator

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