Pseudomorphic step-doped channels field-effect transistor (SDCFET)

L. W. Laih; J. H. Tsai; C. Z. Wu; K. W. Lin; C. C. Cheng; W. C. Liu; W. S. Lour

doi:10.1049/el:19960947

Pseudomorphic step-doped channels field-effect transistor (SDCFET)

L. W. Laih, J. H. Tsai, C. Z. Wu, K. W. Lin, C. C. Cheng, W. C. Liu, W. S. Lour

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A new high performance field-effect transistor using step-doped n-In_0.15Ga_0.85As channels was fabricated and demonstrated. For a 1 × 100μm² device, a high gate breakdown voltage of 15V, a maximum drain saturation current of 735mA/mm, a maximum transconductance of 200mS/mm, and a wide gate voltage range > 3V, with the transconductance > 60mS/mm, are obtained.

Original language	English
Pages (from-to)	1418-1419
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	15
DOIs	https://doi.org/10.1049/el:19960947
Publication status	Published - 1996 Jul 18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19960947

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title = "Pseudomorphic step-doped channels field-effect transistor (SDCFET)",

abstract = "A new high performance field-effect transistor using step-doped n-In0.15Ga0.85As channels was fabricated and demonstrated. For a 1 × 100μm2 device, a high gate breakdown voltage of 15V, a maximum drain saturation current of 735mA/mm, a maximum transconductance of 200mS/mm, and a wide gate voltage range > 3V, with the transconductance > 60mS/mm, are obtained.",

author = "Laih, {L. W.} and Tsai, {J. H.} and Wu, {C. Z.} and Lin, {K. W.} and Cheng, {C. C.} and Liu, {W. C.} and Lour, {W. S.}",

year = "1996",

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T1 - Pseudomorphic step-doped channels field-effect transistor (SDCFET)

AU - Laih, L. W.

AU - Tsai, J. H.

AU - Wu, C. Z.

AU - Lin, K. W.

AU - Cheng, C. C.

AU - Liu, W. C.

AU - Lour, W. S.

PY - 1996/7/18

Y1 - 1996/7/18

N2 - A new high performance field-effect transistor using step-doped n-In0.15Ga0.85As channels was fabricated and demonstrated. For a 1 × 100μm2 device, a high gate breakdown voltage of 15V, a maximum drain saturation current of 735mA/mm, a maximum transconductance of 200mS/mm, and a wide gate voltage range > 3V, with the transconductance > 60mS/mm, are obtained.

AB - A new high performance field-effect transistor using step-doped n-In0.15Ga0.85As channels was fabricated and demonstrated. For a 1 × 100μm2 device, a high gate breakdown voltage of 15V, a maximum drain saturation current of 735mA/mm, a maximum transconductance of 200mS/mm, and a wide gate voltage range > 3V, with the transconductance > 60mS/mm, are obtained.

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VL - 32

SP - 1418

EP - 1419

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Pseudomorphic step-doped channels field-effect transistor (SDCFET)

Abstract

All Science Journal Classification (ASJC) codes

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