Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications

T. H. Lin; M. Belser; Yonhua Tzeng

doi:10.1109/27.16551

Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications

T. H. Lin, M. Belser, Yonhua Tzeng

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.

Original language	English
Pages (from-to)	631-637
Number of pages	7
Journal	IEEE Transactions on Plasma Science
Volume	16
Issue number	6
DOIs	https://doi.org/10.1109/27.16551
Publication status	Published - 1988 Dec

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Condensed Matter Physics

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title = "Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications",

abstract = "Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.",

author = "Lin, {T. H.} and M. Belser and Yonhua Tzeng",

note = "Funding Information: Manuscript received January 21, 1988; revised April 25, 1988. This work was supported by the National Science Foundation under Grant ECS-8504781, the Alabama Research Institute, and the Alabama Microelectronics Science and Technology Center.",

year = "1988",

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T1 - Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications

AU - Lin, T. H.

AU - Belser, M.

AU - Tzeng, Yonhua

N1 - Funding Information: Manuscript received January 21, 1988; revised April 25, 1988. This work was supported by the National Science Foundation under Grant ECS-8504781, the Alabama Research Institute, and the Alabama Microelectronics Science and Technology Center.

PY - 1988/12

Y1 - 1988/12

N2 - Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.

AB - Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.

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