Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications

T. H. Lin, M. Belser, Yon-Hua Tzeng

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.

Original languageEnglish
Pages (from-to)631-637
Number of pages7
JournalIEEE Transactions on Plasma Science
Volume16
Issue number6
DOIs
Publication statusPublished - 1988 Jan 1

Fingerprint

plasma etching
microelectronics
microwaves
nitrogen
polymers
oxygen
etching
rectangular waveguides
electrostatic probes
polyimides
photoresists
power supplies
light emission
quartz
spectrometers
tubes
heating
temperature

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

Cite this

@article{fe53126c83094d779ddd7d34e318af58,
title = "Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications",
abstract = "Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.",
author = "Lin, {T. H.} and M. Belser and Yon-Hua Tzeng",
year = "1988",
month = "1",
day = "1",
doi = "10.1109/27.16551",
language = "English",
volume = "16",
pages = "631--637",
journal = "IEEE Transactions on Plasma Science",
issn = "0093-3813",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications. / Lin, T. H.; Belser, M.; Tzeng, Yon-Hua.

In: IEEE Transactions on Plasma Science, Vol. 16, No. 6, 01.01.1988, p. 631-637.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications

AU - Lin, T. H.

AU - Belser, M.

AU - Tzeng, Yon-Hua

PY - 1988/1/1

Y1 - 1988/1/1

N2 - Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.

AB - Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0024127172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024127172&partnerID=8YFLogxK

U2 - 10.1109/27.16551

DO - 10.1109/27.16551

M3 - Article

VL - 16

SP - 631

EP - 637

JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

SN - 0093-3813

IS - 6

ER -