Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications

T. H. Lin, M. Belser, Yonhua Tzeng

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.

Original languageEnglish
Pages (from-to)631-637
Number of pages7
JournalIEEE Transactions on Plasma Science
Volume16
Issue number6
DOIs
Publication statusPublished - 1988 Dec

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

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