Abstract
Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 631-637 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Plasma Science |
| Volume | 16 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1988 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Condensed Matter Physics
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Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications. / Lin, T. H.; Belser, M.; Tzeng, Yon-Hua.
In: IEEE Transactions on Plasma Science, Vol. 16, No. 6, 01.01.1988, p. 631-637.Research output: Contribution to journal › Article
TY - JOUR
T1 - Pulsed Microwave Plasma Etching of Polymers in Oxygen and Nitrogen for Microelectronic Applications
AU - Lin, T. H.
AU - Belser, M.
AU - Tzeng, Yon-Hua
PY - 1988/1/1
Y1 - 1988/1/1
N2 - Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.
AB - Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polyimide. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51 mm diameter quartz tube and generates pulsed plasmas in oxygen and nitrogen at pressures between 0.1 and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed.
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U2 - 10.1109/27.16551
DO - 10.1109/27.16551
M3 - Article
VL - 16
SP - 631
EP - 637
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
SN - 0093-3813
IS - 6
ER -