TY - JOUR
T1 - Quality optimization of liquid phase deposition SiO2 films on gallium arsenide
AU - Houng, M. P.
AU - Wang, Y. H.
AU - Huang, C. J.
AU - Huang, S. P.
AU - Horng, J. H.
N1 - Funding Information:
The authors wish to express their sincere thanks to Dr. Y.H. Chang for helpful discussion. This work was partially supported by the National Science Council of Republic of China under the contract number: NSC 89-2215-E-268-002.
PY - 2000/11/1
Y1 - 2000/11/1
N2 - For liquid phase deposition (LPD) at room temperature (approximately 40 °C) of silicon dioxide (SiO2) on gallium arsenide (GaAs) substrate, this study correlates growth solution concentrations with resultant film quality. This LPD process pretreats the GaAs substrate with ammonia solution kept at pH = 11-12, thereby generating OH radicals on the GaAs surface which enhance SiO2 deposition. It is found that growth conditions such as low hydrofluosilic acid concentration, proper boric acid concentration, and low growth rate play important roles in optimizing deposited film quality. When LPD-SiO2/GaAs grown at optimum conditions is used to fabricate a metal-oxide-semiconductor field effect transistor, the transconductance, gm, is about 68, the drain current, IDS, is 10 mA for gate oxide thickness = 20 nm and W/L = 40/2. LPD-SiO2/GaAs grown at the proposed conditions equals or exceeds the quality of competing techniques, with a process that proceeds rapidly at room temperature and pressure, with inexpensive equipment.
AB - For liquid phase deposition (LPD) at room temperature (approximately 40 °C) of silicon dioxide (SiO2) on gallium arsenide (GaAs) substrate, this study correlates growth solution concentrations with resultant film quality. This LPD process pretreats the GaAs substrate with ammonia solution kept at pH = 11-12, thereby generating OH radicals on the GaAs surface which enhance SiO2 deposition. It is found that growth conditions such as low hydrofluosilic acid concentration, proper boric acid concentration, and low growth rate play important roles in optimizing deposited film quality. When LPD-SiO2/GaAs grown at optimum conditions is used to fabricate a metal-oxide-semiconductor field effect transistor, the transconductance, gm, is about 68, the drain current, IDS, is 10 mA for gate oxide thickness = 20 nm and W/L = 40/2. LPD-SiO2/GaAs grown at the proposed conditions equals or exceeds the quality of competing techniques, with a process that proceeds rapidly at room temperature and pressure, with inexpensive equipment.
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U2 - 10.1016/S0038-1101(00)00178-7
DO - 10.1016/S0038-1101(00)00178-7
M3 - Article
AN - SCOPUS:0034322629
SN - 0038-1101
VL - 44
SP - 1917
EP - 1923
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 11
ER -