Quantum and classical size effects on thermoelectric transport in Si/Ge superlattices

W. L. Liu, Q. Chen, J. L. Liu, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Quantum size effect thermoelectric enhancement has been intensively investigated. However, the electronic transport along the in-plane direction is also affected by interface scattering that can be attributed to classical size effect. It has been observed that interface scattering sometimes greatly degrade low-dimensional thermoelectric enhancement. To have a complete understanding of the transport with both quantum and classical size effect, we conduct experimental investigation of in-plane thermoelectric properties on Si/Ge superlattices and theoretical characterization of those properties with electron Boltzmann transport model. In this paper, we will report the experimental result and comparison with the modeling.

Original languageEnglish
Title of host publicationProceedings ICT 2002
Subtitle of host publication21st International Conference on Thermoelectrics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages130-134
Number of pages5
ISBN (Electronic)0780376838
DOIs
Publication statusPublished - 2002
Event21st International Conference on Thermoelectrics, ICT 2002 - Long Beach, United States
Duration: 2002 Aug 252002 Aug 29

Publication series

NameInternational Conference on Thermoelectrics, ICT, Proceedings
Volume2002-January

Conference

Conference21st International Conference on Thermoelectrics, ICT 2002
CountryUnited States
CityLong Beach
Period02-08-2502-08-29

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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