Quantum devices using SiGe/Si heterostructures

R. P.G. Karunasiri, K. L. Wang

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Strained-layer Si1-xGex/Si heterostructures have created a great deal of interest due to the potential of integration with the conventional silicon very large scale integrated technology. With the current advances in silicon molecular beam epitaxy (Si-MBE) and other low-temperature epitaxial techniques, many Si1-xGex/Si heterojunction devices have been realized. For example, among those realized are avalanche photodiodes, modulation-doped field-effect transistors, heterojunction bipolar transistors, and more recently, resonant tunneling structures, hot-carrier transistors, and quantum well metal-oxide-semiconductor field-effect transistors. In this paper, several quantum size effects in strained Si1-x Gex layers and their potential in device applications will be reviewed. Among those to be discussed are resonant tunneling, miniband transport, and intersubband absorption in Si1-xGex/Si superlattice structures, optical properties of monolayer SimGen superlattices, and observation of large Stark effect associated with interband transition between quantized states in Si1-xGex/Si quantum well structures.

Original languageEnglish
Pages (from-to)2064-2071
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume9
Issue number4
DOIs
Publication statusPublished - 1991 Jul 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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