Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure

Anyuan Gao, Yu Fei Liu, Jian Xiang Qiu, Barun Ghosh, Thaís V. Trevisan, Yugo Onishi, Chaowei Hu, Tiema Qian, Hung Ju Tien, Shao Wen Chen, Mengqi Huang, Damien Bérubé, Houchen Li, Christian Tzschaschel, Thao Dinh, Zhe Sun, Sheng Chin Ho, Shang Wei Lien, Bahadur Singh, Kenji WatanabeTakashi Taniguchi, David C. Bell, Hsin Lin, Tay Rong Chang, Chunhui Rita Du, Arun Bansil, Liang Fu, Ni Ni, Peter P. Orth, Qiong Ma, Su Yang Xu

Research output: Contribution to journalArticlepeer-review

101 Citations (Scopus)

Abstract

Quantum geometry in condensed-matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in two-dimensional electron gases and the anomalous Hall effect (AHE) in ferromagnets, the quantum metric has rarely been explored. Here, we report a nonlinear Hall effect induced by the quantum metric dipole by interfacing even-layered MnBi2Te4 with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the antiferromagnetic (AFM) spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.

Original languageEnglish
Pages (from-to)181-186
Number of pages6
JournalScience
Volume381
Issue number6654
DOIs
Publication statusPublished - 2023 Jul 14

All Science Journal Classification (ASJC) codes

  • General

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