Abstract
We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H 2 sensors are shown to exhibit strong thickness dependence, with ∼100× enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.
Original language | English |
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Pages (from-to) | 9750-9754 |
Number of pages | 5 |
Journal | Journal of Physical Chemistry C |
Volume | 116 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2012 May 3 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films