Quantum size effects on the chemical sensing performance of two-dimensional semiconductors

Junghyo Nah; S. Bala Kumar; Hui Fang; Yu Ze Chen; Elena Plis; Yu Lun Chueh; Sanjay Krishna; Jing Guo; Ali Javey

doi:10.1021/jp300446z

Quantum size effects on the chemical sensing performance of two-dimensional semiconductors

Junghyo Nah, S. Bala Kumar, Hui Fang, Yu Ze Chen, Elena Plis, Yu Lun Chueh, Sanjay Krishna, Jing Guo, Ali Javey

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H ₂ sensors are shown to exhibit strong thickness dependence, with ∼100× enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.

Original language	English
Pages (from-to)	9750-9754
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	116
Issue number	17
DOIs	https://doi.org/10.1021/jp300446z
Publication status	Published - 2012 May 3

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/jp300446z

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AU - Nah, Junghyo

AU - Kumar, S. Bala

AU - Fang, Hui

AU - Chen, Yu Ze

AU - Plis, Elena

AU - Chueh, Yu Lun

AU - Krishna, Sanjay

AU - Guo, Jing

AU - Javey, Ali

PY - 2012/5/3

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AB - We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H 2 sensors are shown to exhibit strong thickness dependence, with ∼100× enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.

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Quantum size effects on the chemical sensing performance of two-dimensional semiconductors

Abstract

All Science Journal Classification (ASJC) codes

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