Quaternary AlInGaN-based photodetectors

Y. D. Jhou; Shoou-Jinn Chang; Y. K. Su; C. H. Chen; H. C. Lee; C. H. Liu; Y. Y. Lee

doi:10.1049/iet-opt:20070020

Quaternary AlInGaN-based photodetectors

Y. D. Jhou, Shoou-Jinn Chang, Y. K. Su, C. H. Chen, H. C. Lee, C. H. Liu, Y. Y. Lee

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7 Citations (Scopus)

Abstract

The growth of quaternary AlInGaN epitaxial layer on GaN/sapphire substrates by metalorganic chemical vapour deposition is reported. It was found that AlInGaN layers were grown three dimensionally with rough surface at low temperatures and transferred to smooth two-dimensional growth at 860°C. It was also found that In mole fraction in the layers decreased significantly as the AlInGaN growth temperature was increased while Al composition ratio was much less temperature dependent. Furthermore, it was found that solar-blind metal-insulator-semiconductor photodetectors with AlInGaN layer prepared at 860°C could provide us a photocurrent-to-dark-current contrast ratio of 1.93×10⁴ and a UV-to-visible rejection ratio of 38.0.

Original language	English
Pages (from-to)	42-45
Number of pages	4
Journal	IET Optoelectronics
Volume	2
Issue number	1
DOIs	https://doi.org/10.1049/iet-opt:20070020
Publication status	Published - 2008 Feb 22

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1049/iet-opt:20070020

Cite this

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title = "Quaternary AlInGaN-based photodetectors",

abstract = "The growth of quaternary AlInGaN epitaxial layer on GaN/sapphire substrates by metalorganic chemical vapour deposition is reported. It was found that AlInGaN layers were grown three dimensionally with rough surface at low temperatures and transferred to smooth two-dimensional growth at 860°C. It was also found that In mole fraction in the layers decreased significantly as the AlInGaN growth temperature was increased while Al composition ratio was much less temperature dependent. Furthermore, it was found that solar-blind metal-insulator-semiconductor photodetectors with AlInGaN layer prepared at 860°C could provide us a photocurrent-to-dark-current contrast ratio of 1.93×104 and a UV-to-visible rejection ratio of 38.0.",

author = "Jhou, {Y. D.} and Shoou-Jinn Chang and Su, {Y. K.} and Chen, {C. H.} and Lee, {H. C.} and Liu, {C. H.} and Lee, {Y. Y.}",

year = "2008",

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doi = "10.1049/iet-opt:20070020",

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T1 - Quaternary AlInGaN-based photodetectors

AU - Jhou, Y. D.

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Chen, C. H.

AU - Lee, H. C.

AU - Liu, C. H.

AU - Lee, Y. Y.

PY - 2008/2/22

Y1 - 2008/2/22

N2 - The growth of quaternary AlInGaN epitaxial layer on GaN/sapphire substrates by metalorganic chemical vapour deposition is reported. It was found that AlInGaN layers were grown three dimensionally with rough surface at low temperatures and transferred to smooth two-dimensional growth at 860°C. It was also found that In mole fraction in the layers decreased significantly as the AlInGaN growth temperature was increased while Al composition ratio was much less temperature dependent. Furthermore, it was found that solar-blind metal-insulator-semiconductor photodetectors with AlInGaN layer prepared at 860°C could provide us a photocurrent-to-dark-current contrast ratio of 1.93×104 and a UV-to-visible rejection ratio of 38.0.

AB - The growth of quaternary AlInGaN epitaxial layer on GaN/sapphire substrates by metalorganic chemical vapour deposition is reported. It was found that AlInGaN layers were grown three dimensionally with rough surface at low temperatures and transferred to smooth two-dimensional growth at 860°C. It was also found that In mole fraction in the layers decreased significantly as the AlInGaN growth temperature was increased while Al composition ratio was much less temperature dependent. Furthermore, it was found that solar-blind metal-insulator-semiconductor photodetectors with AlInGaN layer prepared at 860°C could provide us a photocurrent-to-dark-current contrast ratio of 1.93×104 and a UV-to-visible rejection ratio of 38.0.

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Quaternary AlInGaN-based photodetectors

Abstract

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