Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes

Chuan Wang, Alexander Badmaev, Alborz Jooyaie, Mingqiang Bao, Kang L. Wang, Kosmas Galatsis, Chongwu Zhou

Research output: Contribution to journalArticlepeer-review

Abstract

This paper reports the radio frequency (RF) and linearity performance of transistors using high-purity semiconducting carbon nanotubes. High-density, uniform semiconducting nanotube networks are deposited at wafer scale using our APTES-assisted nanotube deposition technique, and RF transistors with channel lengths down to 500 nm are fabricated. We report on transistors exhibiting a cutoff frequency (ft) of 5 GHz and with maximum oscillation frequency (fmax) of 1.5 GHz. Besides the cutoff frequency, the other important figure of merit for the RF transistors is the device linearity. For the first time, we report carbon nanotube RF transistor linearity metrics up to 1 GHz. Without the use of active probes to provide the high impedance termination, the measurement bandwidth is therefore not limited, and the linearity measurements can be conducted at the frequencies where the transistors are intended to be operating. We conclude that semiconducting nanotube-based transistors are potentially promising building blocks for highly linear RF electronics and circuit applications.

Original languageEnglish
Pages (from-to)4169-4176
Number of pages8
JournalACS nano
Volume5
Issue number5
DOIs
Publication statusPublished - 2011 May 24

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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