TY - JOUR
T1 - Raman inspection for the annealing induced evolution of sp2 and sp3 bonding behavior in sandwiched Si/C/Si multilayer
AU - Chung, C. K.
AU - Lai, C. W.
AU - Peng, C. C.
AU - Wu, B. H.
N1 - Funding Information:
This work is partially sponsored by National Science Council under grant No NSC 95-2221-E-006-047-MY3 and NSC 96-2628-E-006-080-MY3. We also pay our great thanks to the Center for Micro/Nano Science and Technology (CMNST) and the Center for Precious Instruments in National Cheng Kung University (NCKU), Tainan, Taiwan, for the access of analysis equipments and technical support.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - The effect of annealing on the sandwiched Si/C/Si multilayer on a Si(100) substrate using ion beam sputtering (IBS) system under ultra-high vacuum (UHV) was investigated. Carbon layer thickness was fixed at 100 nm and a-Si ranged from 10 nm to 25 nm. Rapid thermal annealing was performed to investigate the evolution of sp2-sp3 bonding at annealing temperature from room temperature (RT) to 750 °C and annealing time from 0.5 to 2 min. Raman spectroscopy was utilized to characterize bonding behavior of Si/C/Si multilayers for the variation of graphite peak (G-peak), disorder-induced peak (D-peak) of carbon film at specific wavenumbers shift. The higher the integrated intensity ratio (ID/IG), the more the sp2 bonds is. From experimental results, ID/IG ratio increases with annealing temperature from RT to 750 °C due to graphitization effect for the increased sp2 bonds. However, ID/IG ratio reduces a little with annealing time from 0.5 to 2 min. It implies that a little increase of sp3 bonds of carbon, which is primarily from the sp3 Si-C bonds, can be an index of the formation of SiC. Comparing the effect of both annealing temperature and time on the evolution of sp2-sp3 bonds, the annealing temperature dominates more on the sp2-sp3 evolution of a-Si/C/a-Si on the Si(100) under rapid thermal annealing than the annealing time. Also, AES depth profile was used to examine the interdiffusion and reaction between a-Si and C for SiC formation and had a consistent result with Raman.
AB - The effect of annealing on the sandwiched Si/C/Si multilayer on a Si(100) substrate using ion beam sputtering (IBS) system under ultra-high vacuum (UHV) was investigated. Carbon layer thickness was fixed at 100 nm and a-Si ranged from 10 nm to 25 nm. Rapid thermal annealing was performed to investigate the evolution of sp2-sp3 bonding at annealing temperature from room temperature (RT) to 750 °C and annealing time from 0.5 to 2 min. Raman spectroscopy was utilized to characterize bonding behavior of Si/C/Si multilayers for the variation of graphite peak (G-peak), disorder-induced peak (D-peak) of carbon film at specific wavenumbers shift. The higher the integrated intensity ratio (ID/IG), the more the sp2 bonds is. From experimental results, ID/IG ratio increases with annealing temperature from RT to 750 °C due to graphitization effect for the increased sp2 bonds. However, ID/IG ratio reduces a little with annealing time from 0.5 to 2 min. It implies that a little increase of sp3 bonds of carbon, which is primarily from the sp3 Si-C bonds, can be an index of the formation of SiC. Comparing the effect of both annealing temperature and time on the evolution of sp2-sp3 bonds, the annealing temperature dominates more on the sp2-sp3 evolution of a-Si/C/a-Si on the Si(100) under rapid thermal annealing than the annealing time. Also, AES depth profile was used to examine the interdiffusion and reaction between a-Si and C for SiC formation and had a consistent result with Raman.
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U2 - 10.1016/j.tsf.2008.05.028
DO - 10.1016/j.tsf.2008.05.028
M3 - Article
AN - SCOPUS:56649105248
SN - 0040-6090
VL - 517
SP - 1101
EP - 1105
JO - Thin Solid Films
JF - Thin Solid Films
IS - 3
ER -