The effect of annealing on the sandwiched Si/C/Si multilayer on a Si(100) substrate using ion beam sputtering (IBS) system under ultra-high vacuum (UHV) was investigated. Carbon layer thickness was fixed at 100 nm and a-Si ranged from 10 nm to 25 nm. Rapid thermal annealing was performed to investigate the evolution of sp2-sp3 bonding at annealing temperature from room temperature (RT) to 750 °C and annealing time from 0.5 to 2 min. Raman spectroscopy was utilized to characterize bonding behavior of Si/C/Si multilayers for the variation of graphite peak (G-peak), disorder-induced peak (D-peak) of carbon film at specific wavenumbers shift. The higher the integrated intensity ratio (ID/IG), the more the sp2 bonds is. From experimental results, ID/IG ratio increases with annealing temperature from RT to 750 °C due to graphitization effect for the increased sp2 bonds. However, ID/IG ratio reduces a little with annealing time from 0.5 to 2 min. It implies that a little increase of sp3 bonds of carbon, which is primarily from the sp3 Si-C bonds, can be an index of the formation of SiC. Comparing the effect of both annealing temperature and time on the evolution of sp2-sp3 bonds, the annealing temperature dominates more on the sp2-sp3 evolution of a-Si/C/a-Si on the Si(100) under rapid thermal annealing than the annealing time. Also, AES depth profile was used to examine the interdiffusion and reaction between a-Si and C for SiC formation and had a consistent result with Raman.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry