Raman scattering from a self-organized Ge dot superlattice

J. L. Liu; Y. S. Tang; K. L. Wang; T. Radetic; R. Gronsky

doi:10.1063/1.123694

Raman scattering from a self-organized Ge dot superlattice

J. L. Liu
, Y. S. Tang
, K. L. Wang
, T. Radetic
, R. Gronsky

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

The Raman scattering of a self-organized Ge dot superlattice is reported. Phonon confinement effect is observed for the embedded Ge dots in Si matrix. Due to the inter-sub-level transition between the first two confined heavy vole (HH) states in the Ge quantum dots, an optical transition at 1890 cm^-1 has been observed in the polarized Raman spectrum. A method for developing improved Si-based mid-infrared detectors is provided.

Original language	English
Pages (from-to)	1863-1865
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	13
DOIs	https://doi.org/10.1063/1.123694
Publication status	Published - 1999 Mar 29

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.123694

Cite this

@article{541867955c514e34b479527a25df91fc,

title = "Raman scattering from a self-organized Ge dot superlattice",

abstract = "The Raman scattering of a self-organized Ge dot superlattice is reported. Phonon confinement effect is observed for the embedded Ge dots in Si matrix. Due to the inter-sub-level transition between the first two confined heavy vole (HH) states in the Ge quantum dots, an optical transition at 1890 cm-1 has been observed in the polarized Raman spectrum. A method for developing improved Si-based mid-infrared detectors is provided.",

author = "Liu, \{J. L.\} and Tang, \{Y. S.\} and Wang, \{K. L.\} and T. Radetic and R. Gronsky",

year = "1999",

month = mar,

day = "29",

doi = "10.1063/1.123694",

language = "English",

volume = "74",

pages = "1863--1865",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "13",

}

TY - JOUR

T1 - Raman scattering from a self-organized Ge dot superlattice

AU - Liu, J. L.

AU - Tang, Y. S.

AU - Wang, K. L.

AU - Radetic, T.

AU - Gronsky, R.

PY - 1999/3/29

Y1 - 1999/3/29

N2 - The Raman scattering of a self-organized Ge dot superlattice is reported. Phonon confinement effect is observed for the embedded Ge dots in Si matrix. Due to the inter-sub-level transition between the first two confined heavy vole (HH) states in the Ge quantum dots, an optical transition at 1890 cm-1 has been observed in the polarized Raman spectrum. A method for developing improved Si-based mid-infrared detectors is provided.

AB - The Raman scattering of a self-organized Ge dot superlattice is reported. Phonon confinement effect is observed for the embedded Ge dots in Si matrix. Due to the inter-sub-level transition between the first two confined heavy vole (HH) states in the Ge quantum dots, an optical transition at 1890 cm-1 has been observed in the polarized Raman spectrum. A method for developing improved Si-based mid-infrared detectors is provided.

UR - https://www.scopus.com/pages/publications/0032614781

UR - https://www.scopus.com/pages/publications/0032614781#tab=citedBy

U2 - 10.1063/1.123694

DO - 10.1063/1.123694

M3 - Article

AN - SCOPUS:0032614781

SN - 0003-6951

VL - 74

SP - 1863

EP - 1865

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Raman scattering from a self-organized Ge dot superlattice

Abstract

All Science Journal Classification (ASJC) codes

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