Raman scattering studies of Mn-doped ZnO thin films deposited under pure Ar or Ar + N2 sputtering atmosphere

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou

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This paper investigates the anomalous and specific Raman modes present in Mn-doped ZnO thin films deposited using the magnetron co-sputtering method. To trace these peaks, we prepared Mn-doped ZnO films with different Mn concentrations by altering the sputtering power of the Mn target in a pure Ar or Ar + N2 sputtering atmosphere. A broad band observed in the Raman spectra of heavily Mn-doped ZnO films ranges from 500 to 590 cm- 1. This band involves the enhanced A1 longitudinal mode and activated silent modes of ZnO, as well as a characteristic mode of Mn2O 3. Four anomalous Raman peaks at approximately 276, 510, 645 and 585 cm- 1 are present in pure and Mn-doped ZnO films deposited under the Ar + N2 sputtering atmosphere. The peaks at 276 cm- 1 and 510 cm- 1 may originate from the complex defects of Zn i-NO and Zni-Oi, respectively, while the peak at approximately 645 cm- 1 could be due to a complex defect of Zni coupled with both the N and Mn dopants. The results of this study suggest classifying the origins of anomalous and specific Raman peaks in Mn-doped ZnO films into three major types: structural disorder and morphological changes caused by the Mn dopant, Mn-related oxides and intrinsic host-lattice defects coupled with/without the N dopant.

Original languageEnglish
Pages (from-to)1272-1276
Number of pages5
JournalThin Solid Films
Issue number4
Publication statusPublished - 2010 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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