Raman spectroscopy of electrochemically self-assembled CdS quantum dots

A. Balandin; K. L. Wang; N. Kouklin; S. Bandyopadhyay

doi:10.1063/1.125681

Raman spectroscopy of electrochemically self-assembled CdS quantum dots

A. Balandin, K. L. Wang, N. Kouklin, S. Bandyopadhyay

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

133 Citations (Scopus)

Abstract

We report a Raman spectroscopy investigation of electrochemically self-assembled quasiperiodic arrays of CdS quantum dots with characteristic feature size of 10 nm. The dots were synthesized using electrochemical deposition of CdS into a porous anodized alumina film. Polarization-dependent Raman scattering study over an extended frequency range reveals the quantization of electronic states in the conduction band and intersubband transitions. Raman peaks observed at 2919 and 3050 cm^-1 are attributed to transitions between the lowest two subbands. The results suggest that quantum dot arrays, produced by inexpensive robust electrochemical means, may be suitable for infrared detector applications.

Original language	English
Pages (from-to)	137-139
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	2
DOIs	https://doi.org/10.1063/1.125681
Publication status	Published - 2000 Jan 10

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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AU - Wang, K. L.

AU - Kouklin, N.

AU - Bandyopadhyay, S.

PY - 2000/1/10

Y1 - 2000/1/10

N2 - We report a Raman spectroscopy investigation of electrochemically self-assembled quasiperiodic arrays of CdS quantum dots with characteristic feature size of 10 nm. The dots were synthesized using electrochemical deposition of CdS into a porous anodized alumina film. Polarization-dependent Raman scattering study over an extended frequency range reveals the quantization of electronic states in the conduction band and intersubband transitions. Raman peaks observed at 2919 and 3050 cm-1 are attributed to transitions between the lowest two subbands. The results suggest that quantum dot arrays, produced by inexpensive robust electrochemical means, may be suitable for infrared detector applications.

AB - We report a Raman spectroscopy investigation of electrochemically self-assembled quasiperiodic arrays of CdS quantum dots with characteristic feature size of 10 nm. The dots were synthesized using electrochemical deposition of CdS into a porous anodized alumina film. Polarization-dependent Raman scattering study over an extended frequency range reveals the quantization of electronic states in the conduction band and intersubband transitions. Raman peaks observed at 2919 and 3050 cm-1 are attributed to transitions between the lowest two subbands. The results suggest that quantum dot arrays, produced by inexpensive robust electrochemical means, may be suitable for infrared detector applications.

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