Random dopant fluctuation in limited-width FinFET technologies

Meng Hsueh Chiang, Jeng Nan Lin, Keunwoo Kim, Ching Te Chuang

Research output: Contribution to journalArticlepeer-review

94 Citations (Scopus)

Abstract

In this brief, the random-dopant-fluctuation (RDF) effects in FinFET devices are investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, particularly FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an ideally "undoped"silicon channel, the existence of unintended impurity dopants of acceptors and donors will still have a significant impact on device characteristics. The implication from RDF for design is also discussed.

Original languageEnglish
Pages (from-to)2055-2060
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume54
Issue number8
DOIs
Publication statusPublished - 2007 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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