TY - JOUR
T1 - Random dopant fluctuation in limited-width FinFET technologies
AU - Chiang, Meng Hsueh
AU - Lin, Jeng Nan
AU - Kim, Keunwoo
AU - Chuang, Ching Te
N1 - Funding Information:
Manuscript received March 23, 2007. The works of M.-H. Chiang and J.-N. Lin are supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC-95-2221-E-197-021, and the works of K. Kim and C. T. Chuang are supported in part by the Defense Advanced Research Projects Agency Contracts NBCH30390004 and BGR W0132280. The review of this brief was arranged by Editor M. J. Kumar.
PY - 2007/8
Y1 - 2007/8
N2 - In this brief, the random-dopant-fluctuation (RDF) effects in FinFET devices are investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, particularly FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an ideally "undoped"silicon channel, the existence of unintended impurity dopants of acceptors and donors will still have a significant impact on device characteristics. The implication from RDF for design is also discussed.
AB - In this brief, the random-dopant-fluctuation (RDF) effects in FinFET devices are investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, particularly FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an ideally "undoped"silicon channel, the existence of unintended impurity dopants of acceptors and donors will still have a significant impact on device characteristics. The implication from RDF for design is also discussed.
UR - http://www.scopus.com/inward/record.url?scp=34547921216&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547921216&partnerID=8YFLogxK
U2 - 10.1109/TED.2007.901154
DO - 10.1109/TED.2007.901154
M3 - Article
AN - SCOPUS:34547921216
VL - 54
SP - 2055
EP - 2060
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 8
ER -