Rapid thermal annealed InGaN/GaN Flip-Chip LEDs

W. S. Chen; S. C. Shei; S. J. Chang; Y. K. Su; W. C. Lai; C. H. Kuo; Y. C. Lin; C. S. Chang; T. K. Ko; Y. P. Hsu; C. F. Shen

doi:10.1109/TED.2005.860760

Rapid thermal annealed InGaN/GaN Flip-Chip LEDs

W. S. Chen, S. C. Shei, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Nitride-based flip-chip (FC) light-emitting diodes (LEDs) emitting at 465 nm with Ni transparent ohmic contact layers and Ag reflective mirrors were fabricated. With an incident light wavelength of 465 nm, it was found that transmittance of normalized 300°C rapid thermal annealed (RTA) Ni(2.5 nm) Mas 93% while normalized reflectance of 300°C RTA Ni(2.5 nm)/Ag(200 nm) was 92%. It was also found that 300°C RTA Ni(2.5 nm) formed good ohmic contact on n⁺ short-period-superlattice structure with specific contact resistance of 7.8 × 10^-4 Ω·cm². With 20-mA current injection, it was found that forward voltage and output power were 3.15 V and 16.2 mW for FC LED with 300°C RTA Ni(2.5 nm)/Ag(200 nm). Furthermore, it was found that reliabilities of FC LEDs were good.

Original language	English
Pages (from-to)	32-36
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	1
DOIs	https://doi.org/10.1109/TED.2005.860760
Publication status	Published - 2006 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2005.860760

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@article{22c2f5d75b984cc6b992b9e14db13f73,

title = "Rapid thermal annealed InGaN/GaN Flip-Chip LEDs",

abstract = "Nitride-based flip-chip (FC) light-emitting diodes (LEDs) emitting at 465 nm with Ni transparent ohmic contact layers and Ag reflective mirrors were fabricated. With an incident light wavelength of 465 nm, it was found that transmittance of normalized 300°C rapid thermal annealed (RTA) Ni(2.5 nm) Mas 93% while normalized reflectance of 300°C RTA Ni(2.5 nm)/Ag(200 nm) was 92%. It was also found that 300°C RTA Ni(2.5 nm) formed good ohmic contact on n+ short-period-superlattice structure with specific contact resistance of 7.8 × 10-4 Ω·cm2. With 20-mA current injection, it was found that forward voltage and output power were 3.15 V and 16.2 mW for FC LED with 300°C RTA Ni(2.5 nm)/Ag(200 nm). Furthermore, it was found that reliabilities of FC LEDs were good.",

author = "Chen, {W. S.} and Shei, {S. C.} and Chang, {S. J.} and Su, {Y. K.} and Lai, {W. C.} and Kuo, {C. H.} and Lin, {Y. C.} and Chang, {C. S.} and Ko, {T. K.} and Hsu, {Y. P.} and Shen, {C. F.}",

note = "Funding Information: Manuscript received July 12, 2005; revised October 7, 2005. This work was supported in part by the National Science Council under Grant NSC 90-2215-E-008-043, Grant NSC 90-2112-M-008-046, and Grant NSC 93-212XM-006-006, in part by the Center for Micro/Nano Technology Research, National Cheng-Kung University, under projects from the Ministry of Education. The review of this paper was arranged by Editor L. Lunardi.",

year = "2006",

month = jan,

doi = "10.1109/TED.2005.860760",

language = "English",

volume = "53",

pages = "32--36",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Rapid thermal annealed InGaN/GaN Flip-Chip LEDs

AU - Chen, W. S.

AU - Shei, S. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Lai, W. C.

AU - Kuo, C. H.

AU - Lin, Y. C.

AU - Chang, C. S.

AU - Ko, T. K.

AU - Hsu, Y. P.

AU - Shen, C. F.

N1 - Funding Information: Manuscript received July 12, 2005; revised October 7, 2005. This work was supported in part by the National Science Council under Grant NSC 90-2215-E-008-043, Grant NSC 90-2112-M-008-046, and Grant NSC 93-212XM-006-006, in part by the Center for Micro/Nano Technology Research, National Cheng-Kung University, under projects from the Ministry of Education. The review of this paper was arranged by Editor L. Lunardi.

PY - 2006/1

Y1 - 2006/1

N2 - Nitride-based flip-chip (FC) light-emitting diodes (LEDs) emitting at 465 nm with Ni transparent ohmic contact layers and Ag reflective mirrors were fabricated. With an incident light wavelength of 465 nm, it was found that transmittance of normalized 300°C rapid thermal annealed (RTA) Ni(2.5 nm) Mas 93% while normalized reflectance of 300°C RTA Ni(2.5 nm)/Ag(200 nm) was 92%. It was also found that 300°C RTA Ni(2.5 nm) formed good ohmic contact on n+ short-period-superlattice structure with specific contact resistance of 7.8 × 10-4 Ω·cm2. With 20-mA current injection, it was found that forward voltage and output power were 3.15 V and 16.2 mW for FC LED with 300°C RTA Ni(2.5 nm)/Ag(200 nm). Furthermore, it was found that reliabilities of FC LEDs were good.

AB - Nitride-based flip-chip (FC) light-emitting diodes (LEDs) emitting at 465 nm with Ni transparent ohmic contact layers and Ag reflective mirrors were fabricated. With an incident light wavelength of 465 nm, it was found that transmittance of normalized 300°C rapid thermal annealed (RTA) Ni(2.5 nm) Mas 93% while normalized reflectance of 300°C RTA Ni(2.5 nm)/Ag(200 nm) was 92%. It was also found that 300°C RTA Ni(2.5 nm) formed good ohmic contact on n+ short-period-superlattice structure with specific contact resistance of 7.8 × 10-4 Ω·cm2. With 20-mA current injection, it was found that forward voltage and output power were 3.15 V and 16.2 mW for FC LED with 300°C RTA Ni(2.5 nm)/Ag(200 nm). Furthermore, it was found that reliabilities of FC LEDs were good.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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Rapid thermal annealed InGaN/GaN Flip-Chip LEDs

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