Rapid thermal annealing enhanced crystalline SiC particles at lower formation temperature

B. H. Wu, Chen-Kuei Chung, C. C. Peng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Formation of nanoparticle SiC (np-SiC) from three-layer Si/C/Si multilayers on Si(100) substrates were investigated using ultra-high-vacuum ion beam sputtering and post annealing by conventional furnace annealing (FA) and rapid thermal annealing (RTA). Fixing the thickness of bottom Si-layer at 50 nm, different thicknessses of the top Si and C layers were designed to study the effect of annealing on the reaction of np-SiC formation, that is, three-layer Si/C/Si structures with thicknesses of 50/200/50 nm by FA and 10/100/50 nm by RTA. There are almost no particle appears at 700 °C 1.0 h by FA due to low thermal energy. It was observed that np-SiC appeared at a density order about 108 cm-2 by FA at 900 °C for 1.0 h, but many np-SiC can be realized at 750 °C for annealing time as short as 1 min at a density order about 1010 cm-2 by RTA. The density is much higher than conventional nanoparticles synthesis using CVD or PVD. The reaction temperature of SiC is also lower than the conventional CVD or FA because of RTA enhanced SiC crystallization behavior at high heating rate. The annealing method influences the particle formation. The particle size, distribution and density are concerned with the top and middle layer thickness. Thermal energy is the diving force for the crystalline SiC formation through interdiffusion between C and Si.

Original languageEnglish
Title of host publication3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
Pages1181-1184
Number of pages4
DOIs
Publication statusPublished - 2008
Event3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 - Sanya, China
Duration: 2008 Jan 62008 Jan 9

Other

Other3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
CountryChina
CitySanya
Period08-01-0608-01-09

Fingerprint

Rapid thermal annealing
Annealing
Crystalline materials
Furnaces
Nanoparticles
Temperature
Thermal energy
Chemical vapor deposition
Physical vapor deposition
Ultrahigh vacuum
Heating rate
Particle size analysis
Ion beams
Particles (particulate matter)
Sputtering
Multilayers
Crystallization
Substrates

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Wu, B. H., Chung, C-K., & Peng, C. C. (2008). Rapid thermal annealing enhanced crystalline SiC particles at lower formation temperature. In 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 (pp. 1181-1184). [4484528] https://doi.org/10.1109/NEMS.2008.4484528
Wu, B. H. ; Chung, Chen-Kuei ; Peng, C. C. / Rapid thermal annealing enhanced crystalline SiC particles at lower formation temperature. 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. 2008. pp. 1181-1184
@inproceedings{e3874cc082c94e5caef253b14eddef3b,
title = "Rapid thermal annealing enhanced crystalline SiC particles at lower formation temperature",
abstract = "Formation of nanoparticle SiC (np-SiC) from three-layer Si/C/Si multilayers on Si(100) substrates were investigated using ultra-high-vacuum ion beam sputtering and post annealing by conventional furnace annealing (FA) and rapid thermal annealing (RTA). Fixing the thickness of bottom Si-layer at 50 nm, different thicknessses of the top Si and C layers were designed to study the effect of annealing on the reaction of np-SiC formation, that is, three-layer Si/C/Si structures with thicknesses of 50/200/50 nm by FA and 10/100/50 nm by RTA. There are almost no particle appears at 700 °C 1.0 h by FA due to low thermal energy. It was observed that np-SiC appeared at a density order about 108 cm-2 by FA at 900 °C for 1.0 h, but many np-SiC can be realized at 750 °C for annealing time as short as 1 min at a density order about 1010 cm-2 by RTA. The density is much higher than conventional nanoparticles synthesis using CVD or PVD. The reaction temperature of SiC is also lower than the conventional CVD or FA because of RTA enhanced SiC crystallization behavior at high heating rate. The annealing method influences the particle formation. The particle size, distribution and density are concerned with the top and middle layer thickness. Thermal energy is the diving force for the crystalline SiC formation through interdiffusion between C and Si.",
author = "Wu, {B. H.} and Chen-Kuei Chung and Peng, {C. C.}",
year = "2008",
doi = "10.1109/NEMS.2008.4484528",
language = "English",
isbn = "9781424419081",
pages = "1181--1184",
booktitle = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008",

}

Wu, BH, Chung, C-K & Peng, CC 2008, Rapid thermal annealing enhanced crystalline SiC particles at lower formation temperature. in 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008., 4484528, pp. 1181-1184, 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008, Sanya, China, 08-01-06. https://doi.org/10.1109/NEMS.2008.4484528

Rapid thermal annealing enhanced crystalline SiC particles at lower formation temperature. / Wu, B. H.; Chung, Chen-Kuei; Peng, C. C.

3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. 2008. p. 1181-1184 4484528.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Rapid thermal annealing enhanced crystalline SiC particles at lower formation temperature

AU - Wu, B. H.

AU - Chung, Chen-Kuei

AU - Peng, C. C.

PY - 2008

Y1 - 2008

N2 - Formation of nanoparticle SiC (np-SiC) from three-layer Si/C/Si multilayers on Si(100) substrates were investigated using ultra-high-vacuum ion beam sputtering and post annealing by conventional furnace annealing (FA) and rapid thermal annealing (RTA). Fixing the thickness of bottom Si-layer at 50 nm, different thicknessses of the top Si and C layers were designed to study the effect of annealing on the reaction of np-SiC formation, that is, three-layer Si/C/Si structures with thicknesses of 50/200/50 nm by FA and 10/100/50 nm by RTA. There are almost no particle appears at 700 °C 1.0 h by FA due to low thermal energy. It was observed that np-SiC appeared at a density order about 108 cm-2 by FA at 900 °C for 1.0 h, but many np-SiC can be realized at 750 °C for annealing time as short as 1 min at a density order about 1010 cm-2 by RTA. The density is much higher than conventional nanoparticles synthesis using CVD or PVD. The reaction temperature of SiC is also lower than the conventional CVD or FA because of RTA enhanced SiC crystallization behavior at high heating rate. The annealing method influences the particle formation. The particle size, distribution and density are concerned with the top and middle layer thickness. Thermal energy is the diving force for the crystalline SiC formation through interdiffusion between C and Si.

AB - Formation of nanoparticle SiC (np-SiC) from three-layer Si/C/Si multilayers on Si(100) substrates were investigated using ultra-high-vacuum ion beam sputtering and post annealing by conventional furnace annealing (FA) and rapid thermal annealing (RTA). Fixing the thickness of bottom Si-layer at 50 nm, different thicknessses of the top Si and C layers were designed to study the effect of annealing on the reaction of np-SiC formation, that is, three-layer Si/C/Si structures with thicknesses of 50/200/50 nm by FA and 10/100/50 nm by RTA. There are almost no particle appears at 700 °C 1.0 h by FA due to low thermal energy. It was observed that np-SiC appeared at a density order about 108 cm-2 by FA at 900 °C for 1.0 h, but many np-SiC can be realized at 750 °C for annealing time as short as 1 min at a density order about 1010 cm-2 by RTA. The density is much higher than conventional nanoparticles synthesis using CVD or PVD. The reaction temperature of SiC is also lower than the conventional CVD or FA because of RTA enhanced SiC crystallization behavior at high heating rate. The annealing method influences the particle formation. The particle size, distribution and density are concerned with the top and middle layer thickness. Thermal energy is the diving force for the crystalline SiC formation through interdiffusion between C and Si.

UR - http://www.scopus.com/inward/record.url?scp=50249096822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249096822&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2008.4484528

DO - 10.1109/NEMS.2008.4484528

M3 - Conference contribution

SN - 9781424419081

SP - 1181

EP - 1184

BT - 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008

ER -

Wu BH, Chung C-K, Peng CC. Rapid thermal annealing enhanced crystalline SiC particles at lower formation temperature. In 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. 2008. p. 1181-1184. 4484528 https://doi.org/10.1109/NEMS.2008.4484528