Rapid thermal annealing of chemical bath-deposited CuxS films and their characterization

Yung Tang Nien; In Gann Chen

doi:10.1016/j.jallcom.2008.04.012

Rapid thermal annealing of chemical bath-deposited Cu_xS films and their characterization

Yung Tang Nien, In Gann Chen

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Thin films of amorphous copper sulfide (Cu_xS, x = 2) with a thickness of around 40 nm deposited at room temperature on glass and silicon substrates from a solution containing copper complex and thiourea, showed a homogeneous distribution of copper and sulfur, based on their elemental mapping images. Scanning electron micrographs presented Cu₂S films exhibiting strong condensation after rapid thermal annealing at temperatures of >200 °C, which is believed to result from the decomposition of solvents or films. Meanwhile, the as-deposited Cu₂S was found to convert to CuS at 200-300 °C by referring to the shifting of their Raman (472 cm^-1 → 474 cm^-1) and X-ray photoelectron spectrum (Cu 2p_3/2: 932 eV → 934 eV) peaks. Optical transmission spectra also revealed the phase transformation of the as-deposited Cu_xS film from Cu₂S to CuS at 200-300 °C.

Original language	English
Pages (from-to)	553-556
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	471
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2008.04.012
Publication status	Published - 2009 Mar 5

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2008.04.012

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title = "Rapid thermal annealing of chemical bath-deposited CuxS films and their characterization",

abstract = "Thin films of amorphous copper sulfide (CuxS, x = 2) with a thickness of around 40 nm deposited at room temperature on glass and silicon substrates from a solution containing copper complex and thiourea, showed a homogeneous distribution of copper and sulfur, based on their elemental mapping images. Scanning electron micrographs presented Cu2S films exhibiting strong condensation after rapid thermal annealing at temperatures of >200 °C, which is believed to result from the decomposition of solvents or films. Meanwhile, the as-deposited Cu2S was found to convert to CuS at 200-300 °C by referring to the shifting of their Raman (472 cm-1 → 474 cm-1) and X-ray photoelectron spectrum (Cu 2p3/2: 932 eV → 934 eV) peaks. Optical transmission spectra also revealed the phase transformation of the as-deposited CuxS film from Cu2S to CuS at 200-300 °C.",

author = "Nien, {Yung Tang} and Chen, {In Gann}",

year = "2009",

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doi = "10.1016/j.jallcom.2008.04.012",

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journal = "Journal of Alloys and Compounds",

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T1 - Rapid thermal annealing of chemical bath-deposited CuxS films and their characterization

AU - Nien, Yung Tang

AU - Chen, In Gann

PY - 2009/3/5

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N2 - Thin films of amorphous copper sulfide (CuxS, x = 2) with a thickness of around 40 nm deposited at room temperature on glass and silicon substrates from a solution containing copper complex and thiourea, showed a homogeneous distribution of copper and sulfur, based on their elemental mapping images. Scanning electron micrographs presented Cu2S films exhibiting strong condensation after rapid thermal annealing at temperatures of >200 °C, which is believed to result from the decomposition of solvents or films. Meanwhile, the as-deposited Cu2S was found to convert to CuS at 200-300 °C by referring to the shifting of their Raman (472 cm-1 → 474 cm-1) and X-ray photoelectron spectrum (Cu 2p3/2: 932 eV → 934 eV) peaks. Optical transmission spectra also revealed the phase transformation of the as-deposited CuxS film from Cu2S to CuS at 200-300 °C.

AB - Thin films of amorphous copper sulfide (CuxS, x = 2) with a thickness of around 40 nm deposited at room temperature on glass and silicon substrates from a solution containing copper complex and thiourea, showed a homogeneous distribution of copper and sulfur, based on their elemental mapping images. Scanning electron micrographs presented Cu2S films exhibiting strong condensation after rapid thermal annealing at temperatures of >200 °C, which is believed to result from the decomposition of solvents or films. Meanwhile, the as-deposited Cu2S was found to convert to CuS at 200-300 °C by referring to the shifting of their Raman (472 cm-1 → 474 cm-1) and X-ray photoelectron spectrum (Cu 2p3/2: 932 eV → 934 eV) peaks. Optical transmission spectra also revealed the phase transformation of the as-deposited CuxS film from Cu2S to CuS at 200-300 °C.

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Rapid thermal annealing of chemical bath-deposited Cu_xS films and their characterization

Abstract

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