Rashba effect within the space-charge layer of a semiconductor

Chung Huang Lin, Tay Rong Chang, Ro Ya Liu, Cheng Maw Cheng, Ku Ding Tsuei, H. T. Jeng, Chung Yu Mou, Iwao Matsuda, S. J. Tang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The observed heavy-hole, light-hole and split-off band edges of a semiconductor are the well known consequence of two physical processes: atomic spin-orbital interaction and solid-state band-band anticrossing. In this work, we examined the four band-edge-like bands in great detail within the Ge space-charge layer with either Pb/Ge(111)- R30° or a 2 ML Pb film on Ge(111). Our results reveal that the conventional picture of band edges for a semiconductor is actually crude. In addition, momentum-dependent Rashba splitting effect can be included to explain the observed non-split-off band, indicating the Rashba effect as an intrinsic property near a semiconductor surface.

Original languageEnglish
Article number045003
JournalNew Journal of Physics
Volume16
DOIs
Publication statusPublished - 2014 Apr

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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