TY - CHAP
T1 - RE-T-silicon/-germanium intermetallic materials
AU - Lin, Shih Yang
AU - Hien Nguyen, Thi Dieu
AU - Dien, Vo Khuong
AU - Lee, Chi Hsuan
AU - Liu, Hsin Yi
AU - Pham, Hai Duong
AU - Duyen Huynh, Thi My
AU - Han, Nguyen Thi
AU - Thuy Tran, Ngoc Thanh
AU - Li, Wei Bang
AU - Lin, Ming Fa
N1 - Publisher Copyright:
© 2023 Elsevier Inc. All rights reserved.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - The transition metal (T) and rare-earth metal (R) adatoms are predicted to reveal the non-uniform pentagons with the neighboring atoms. The covalent π and σ bondings are fully assisted by the metallic T-Ge, R-Ge, T-T, or R-R ones. Hence, the addressed 1D systems belong to the ferromagnetic metals with the spin-split energy subbands and observable magnetic moments. The optical excitations could be regarded the coupled quasiparticles of the initial and final states. The well-defined composite quasiparticles are successfully developed under such cases. The diverse heterojunctions come to exist in the basic and applied science researches because of experimental syntheses, greatly enhanced functionalities, and highly potential applications. The successful growths of semiconductors and semiconductor compounds are done by MBE on the specific substrates.
AB - The transition metal (T) and rare-earth metal (R) adatoms are predicted to reveal the non-uniform pentagons with the neighboring atoms. The covalent π and σ bondings are fully assisted by the metallic T-Ge, R-Ge, T-T, or R-R ones. Hence, the addressed 1D systems belong to the ferromagnetic metals with the spin-split energy subbands and observable magnetic moments. The optical excitations could be regarded the coupled quasiparticles of the initial and final states. The well-defined composite quasiparticles are successfully developed under such cases. The diverse heterojunctions come to exist in the basic and applied science researches because of experimental syntheses, greatly enhanced functionalities, and highly potential applications. The successful growths of semiconductors and semiconductor compounds are done by MBE on the specific substrates.
UR - http://www.scopus.com/inward/record.url?scp=85163493824&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85163493824&partnerID=8YFLogxK
U2 - 10.1016/B978-0-443-15801-8.00006-2
DO - 10.1016/B978-0-443-15801-8.00006-2
M3 - Chapter
AN - SCOPUS:85163493824
SN - 9780443158025
SP - 389
EP - 400
BT - Fundamental Physicochemical Properties of Germanene-related Materials
PB - Elsevier
ER -