Reaction of carbon and silicon at high temperature deposition

C. K. Chung, Bo-Hsiung Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In order to study the reaction mechanism of insitu formation of silicon carbide (SiC), the carbon was deposited on the crystalline silicon (c-Si) substrate at high temperature of 400-600 °C using ultra-high-vacuum ion beam sputtering. X-ray diffraction, Raman spectra, Auger electron spectroscopy and high resolution scanning electron microscopy (SEM) with the attached dispersive X-ray (EDX) detector were used to examine the effect of substrate temperature on the reaction mechanism. Amorphous carbon was formed at room-temperature deposition and increased its disorder state with increasing deposition temperature to 500 °C corresponding to higher ratio of disorder peak to graphite peak intensity in Raman spectrum. The crystalline silicon carbide (c-SiC) was formed at 600 °C from the diffracted SiC(111) peak, which is much lower than conventional CVD c-SiC formed at more than 1000 °C. Also, a nanoweb-like morphology of c-SiC was observed on the surface from the SEM image. The atomic composition ratio of Si to carbon was about 54/46 from EDX analysis. Thermal energy is the diving force for the crystalline SiC formation through the interdiffusion between carbon and c-Si. The nanoweb-like morphology may be attributed the high surface energy of SiC with strong Si-C bonding.

Original languageEnglish
Title of host publication3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
Pages136-139
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 1
Event3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 - Sanya, China
Duration: 2008 Jan 62008 Jan 9

Publication series

Name3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS

Other

Other3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
CountryChina
CitySanya
Period08-01-0608-01-09

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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