Reactions between electroless Ni-Cu-P deposit and 63Sn-37Pb flip chip solder bumps during reflow

Chun Jen Chen, Kwang-Lung Lin

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

This study investigates the interfacial reactions between electroless Ni-Cu-P deposit and 63Sn-37Pb solder bumps under various reflow conditions. The morphology of the intermetallic compounds formed at the Ni-Cu-P/Sn-Pb interface changes with respect to reflow cycle, reflow temperature, and reflow time. The (Ni,Cu)3Sn4 compounds with three different morphologies of fine grain, whisker, and polygonal grain form at the Ni-Cu-P/Sn-Pb interface after reflow at 220 °C for 15 s. The whisker-shape and polygonal grains detach from the Ni-Cu-P deposit into the Sn-Pb solder during multiple reflows. The (Ni,Cu)3Sn4 compound grows rapidly when the reflow temperature is above the Ni-Sn eutectic temperature, 231 °C. A continuous (Ni,Cu)3Sn4 layer forms after reflow at 220 °C for 10 min. A 4.5 μm Ni-Cu-P deposit prevents the interdiffusion of Sn and Al atoms across the Ni-Cu-P deposit after 10 reflow cycles at 220 °C for 15 s and after reflow at 220 °C for 10 min.

Original languageEnglish
Pages (from-to)1007-1014
Number of pages8
JournalJournal of Electronic Materials
Volume29
Issue number8
DOIs
Publication statusPublished - 2000 Aug 1

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solders
Soldering alloys
Deposits
deposits
chips
cycles
Surface chemistry
eutectics
Temperature
Eutectics
Intermetallics
temperature
intermetallics
Atoms
atoms

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "This study investigates the interfacial reactions between electroless Ni-Cu-P deposit and 63Sn-37Pb solder bumps under various reflow conditions. The morphology of the intermetallic compounds formed at the Ni-Cu-P/Sn-Pb interface changes with respect to reflow cycle, reflow temperature, and reflow time. The (Ni,Cu)3Sn4 compounds with three different morphologies of fine grain, whisker, and polygonal grain form at the Ni-Cu-P/Sn-Pb interface after reflow at 220 °C for 15 s. The whisker-shape and polygonal grains detach from the Ni-Cu-P deposit into the Sn-Pb solder during multiple reflows. The (Ni,Cu)3Sn4 compound grows rapidly when the reflow temperature is above the Ni-Sn eutectic temperature, 231 °C. A continuous (Ni,Cu)3Sn4 layer forms after reflow at 220 °C for 10 min. A 4.5 μm Ni-Cu-P deposit prevents the interdiffusion of Sn and Al atoms across the Ni-Cu-P deposit after 10 reflow cycles at 220 °C for 15 s and after reflow at 220 °C for 10 min.",
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Reactions between electroless Ni-Cu-P deposit and 63Sn-37Pb flip chip solder bumps during reflow. / Chen, Chun Jen; Lin, Kwang-Lung.

In: Journal of Electronic Materials, Vol. 29, No. 8, 01.08.2000, p. 1007-1014.

Research output: Contribution to journalArticle

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