Reactive ion etching for AlGaInP/GaInP laser structures

Y. Z. Juang, Y. K. Su, S. J. Chang, D. F. Huang, S. C. Chang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


To fabricate the AlGaInP/GaInP strained-multiple-quantum well laser, the reactive ion etching of GaAs, GaInP, AlGaInP, and AlInP in BCl3/Ar discharges was investigated as a function of plasma parameters such as power, pressure, gas flow rate, and reactive composition, as well as etching time. Photoluminescence and Auger electron spectroscopy measurements were used to characterize the damage and surface residues caused by reactive ion etching. We have achieved a highly selective etching of GaAs with underlying GaInP. Selective etching of GaInP with AlInP and a smooth etching surface were also achieved.

Original languageEnglish
Pages (from-to)2031-2036
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Reactive ion etching for AlGaInP/GaInP laser structures'. Together they form a unique fingerprint.

Cite this