Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges

S. J. Chang, Y. Z. Juang, O. K. Nayak, Y. Shiraki

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7 Citations (Scopus)

Abstract

The reactive ion etching (RIE) of Si and SiGe in CF4/Ar and Cl2/BCl3/Ar discharge is investigated as a function of plasma parameters such as power, pressure, and relative composition. We found that the etching rates of Si and SiGe are normally faster in CF4/Ar than in Cl2/BCl3/Ar since Si-based chloride has a high boiling point. Using BCl3 containing gases, we can achieve a better etching result when the BCl3 ratio was less than 10% at 60 mTorr and 95 W. We also selectively etched Si0.87Ge0.13 on Si by CF4 containing gas mixtures. In 2CF4/3Ar discharges, we can achieve a high selective etching when the pressure is high and the power is low.

Original languageEnglish
Pages (from-to)22-27
Number of pages6
JournalMaterials Chemistry and Physics
Volume60
Issue number1
DOIs
Publication statusPublished - 1999 Jul 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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