Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges

S. J. Chang; Y. Z. Juang; O. K. Nayak; Y. Shiraki

doi:10.1016/S0254-0584(99)00034-6

Reactive ion etching of Si/SiGe in CF₄/Ar and Cl₂/BCl₃/Ar discharges

S. J. Chang, Y. Z. Juang, O. K. Nayak, Y. Shiraki

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The reactive ion etching (RIE) of Si and SiGe in CF₄/Ar and Cl₂/BCl₃/Ar discharge is investigated as a function of plasma parameters such as power, pressure, and relative composition. We found that the etching rates of Si and SiGe are normally faster in CF₄/Ar than in Cl₂/BCl₃/Ar since Si-based chloride has a high boiling point. Using BCl₃ containing gases, we can achieve a better etching result when the BCl₃ ratio was less than 10% at 60 mTorr and 95 W. We also selectively etched Si_0.87Ge_0.13 on Si by CF₄ containing gas mixtures. In 2CF₄/3Ar discharges, we can achieve a high selective etching when the pressure is high and the power is low.

Original language	English
Pages (from-to)	22-27
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	60
Issue number	1
DOIs	https://doi.org/10.1016/S0254-0584(99)00034-6
Publication status	Published - 1999 Jul 15

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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title = "Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges",

abstract = "The reactive ion etching (RIE) of Si and SiGe in CF4/Ar and Cl2/BCl3/Ar discharge is investigated as a function of plasma parameters such as power, pressure, and relative composition. We found that the etching rates of Si and SiGe are normally faster in CF4/Ar than in Cl2/BCl3/Ar since Si-based chloride has a high boiling point. Using BCl3 containing gases, we can achieve a better etching result when the BCl3 ratio was less than 10% at 60 mTorr and 95 W. We also selectively etched Si0.87Ge0.13 on Si by CF4 containing gas mixtures. In 2CF4/3Ar discharges, we can achieve a high selective etching when the pressure is high and the power is low.",

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T1 - Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges

AU - Chang, S. J.

AU - Juang, Y. Z.

AU - Nayak, O. K.

AU - Shiraki, Y.

PY - 1999/7/15

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N2 - The reactive ion etching (RIE) of Si and SiGe in CF4/Ar and Cl2/BCl3/Ar discharge is investigated as a function of plasma parameters such as power, pressure, and relative composition. We found that the etching rates of Si and SiGe are normally faster in CF4/Ar than in Cl2/BCl3/Ar since Si-based chloride has a high boiling point. Using BCl3 containing gases, we can achieve a better etching result when the BCl3 ratio was less than 10% at 60 mTorr and 95 W. We also selectively etched Si0.87Ge0.13 on Si by CF4 containing gas mixtures. In 2CF4/3Ar discharges, we can achieve a high selective etching when the pressure is high and the power is low.

AB - The reactive ion etching (RIE) of Si and SiGe in CF4/Ar and Cl2/BCl3/Ar discharge is investigated as a function of plasma parameters such as power, pressure, and relative composition. We found that the etching rates of Si and SiGe are normally faster in CF4/Ar than in Cl2/BCl3/Ar since Si-based chloride has a high boiling point. Using BCl3 containing gases, we can achieve a better etching result when the BCl3 ratio was less than 10% at 60 mTorr and 95 W. We also selectively etched Si0.87Ge0.13 on Si by CF4 containing gas mixtures. In 2CF4/3Ar discharges, we can achieve a high selective etching when the pressure is high and the power is low.

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