TY - JOUR
T1 - Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges
AU - Chang, S. J.
AU - Juang, Y. Z.
AU - Nayak, O. K.
AU - Shiraki, Y.
N1 - Funding Information:
The authors would like to thank Professor Y.K. Su for his helpful discussion. This work was supported by National Science Council, ROC under contract NSC-82-0404-E-006-301.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1999/7/15
Y1 - 1999/7/15
N2 - The reactive ion etching (RIE) of Si and SiGe in CF4/Ar and Cl2/BCl3/Ar discharge is investigated as a function of plasma parameters such as power, pressure, and relative composition. We found that the etching rates of Si and SiGe are normally faster in CF4/Ar than in Cl2/BCl3/Ar since Si-based chloride has a high boiling point. Using BCl3 containing gases, we can achieve a better etching result when the BCl3 ratio was less than 10% at 60 mTorr and 95 W. We also selectively etched Si0.87Ge0.13 on Si by CF4 containing gas mixtures. In 2CF4/3Ar discharges, we can achieve a high selective etching when the pressure is high and the power is low.
AB - The reactive ion etching (RIE) of Si and SiGe in CF4/Ar and Cl2/BCl3/Ar discharge is investigated as a function of plasma parameters such as power, pressure, and relative composition. We found that the etching rates of Si and SiGe are normally faster in CF4/Ar than in Cl2/BCl3/Ar since Si-based chloride has a high boiling point. Using BCl3 containing gases, we can achieve a better etching result when the BCl3 ratio was less than 10% at 60 mTorr and 95 W. We also selectively etched Si0.87Ge0.13 on Si by CF4 containing gas mixtures. In 2CF4/3Ar discharges, we can achieve a high selective etching when the pressure is high and the power is low.
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U2 - 10.1016/S0254-0584(99)00034-6
DO - 10.1016/S0254-0584(99)00034-6
M3 - Article
AN - SCOPUS:0032681842
VL - 60
SP - 22
EP - 27
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
IS - 1
ER -