Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/Ar

W. R. Chen, S. J. Chang, Y. K. Su, W. H. Lan, A. C.H. Lin, H. Chang

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The etching characteristics of ZnSe, ZnS0.07Se0.93, Zn0.88Cd0.12Se and Zn0.95Mg0.05S0.09Se0.91 have been studied using 2CH4/9H2/2Ar and 9H2/2Ar as the reactive ion etching (RIE) etching gas. It was demonstrated that a smooth surface and a good anisotropic feature can be achieved when these samples are etched in 9H2/2Ar at 60 mTorr with a 150 W plasma power. Under this etching condition, the etching rates of ZnSe, ZnS0.07Se0.93, Zn0.88Cd0.12Se and Zn0.95Mg0.05S0.09Sc0.91 were 7.8 nm/min, 9.5 nm/min, 10.4 nm/min and 8.3 nm/min, respectively. Carbon-related needlelike features were observed when methane was added to the etching gas, and these needlelike features can be removed by a high plasma power. Photoluminescence (PL) measurement shows that 9H2/2Ar can induce a greater amount of surface damage than 2CH4/9H2/2Ar. However, these damages can be partially removed by post etching annealing. The optimal annealing temperature is 450°C for samples etched in 9H2/2Ar and 250°C for samples etched in 2CH4/9H2/2Ar.

Original languageEnglish
Pages (from-to)3308-3313
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number6 A
DOIs
Publication statusPublished - 2000 Jan 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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