Reactive wafer bonding with nanoscale Ag/Cu multilayers

Yu chen Liu, Shih kang Lin, Hao Zhang, Shijo Nagao, Chuantong Chen, Katsuaki Suganuma

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Reactive bonding using nanoscale multilayers based on the high specific surface/interface energy is a promising low-temperature and low-pressure wafer-bonding process. Herein, Si wafers were bonded using nanoscale Ag/Cu multilayers in N2 or the ambient atmosphere. A flawless joint composed of Ag-rich and Cu-rich face-centered cubic (fcc) phases was achieved in N2 with 22.2 MPa shear strength. However, a peculiar “fcc-(Ag)+voids/Cu2O/fcc-(Ag)+voids” three-layer sandwich structure with 11.1 MPa shear strength was formed due to significant out segregation of Cu toward the bonding-interface in the ambient atmosphere. The bonding mechanism and the role of oxygen were unveiled based on CALPHAD (CALculation-of-PHAse-Diagram) thermodynamic modeling.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalScripta Materialia
Publication statusPublished - 2020 Jul 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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