Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film

S. Yang; H. C. Hsu; W. R. Liu; B. H. Lin; C. C. Kuo; C. H. Hsu; M. O. Eriksson; P. O. Holtz; W. F. Hsieh

doi:10.1063/1.4887280

Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film

S. Yang, H. C. Hsu, W. R. Liu, B. H. Lin, C. C. Kuo, C. H. Hsu, M. O. Eriksson, P. O. Holtz, W. F. Hsieh

Department of Photonics

11 Citations (Scopus)

Abstract

We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.

Original language	English
Article number	011106
Journal	Applied Physics Letters
Volume	105
Issue number	1
DOIs	https://doi.org/10.1063/1.4887280
Publication status	Published - 2014 Jul 7

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4887280

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title = "Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film",

abstract = "We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.",

author = "S. Yang and Hsu, {H. C.} and Liu, {W. R.} and Lin, {B. H.} and Kuo, {C. C.} and Hsu, {C. H.} and Eriksson, {M. O.} and Holtz, {P. O.} and Hsieh, {W. F.}",

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T1 - Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film

AU - Yang, S.

AU - Hsu, H. C.

AU - Liu, W. R.

AU - Lin, B. H.

AU - Kuo, C. C.

AU - Hsu, C. H.

AU - Eriksson, M. O.

AU - Holtz, P. O.

AU - Hsieh, W. F.

PY - 2014/7/7

Y1 - 2014/7/7

N2 - We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.

AB - We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.

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Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film

Abstract

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