Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film

S. Yang, H. C. Hsu, W. R. Liu, B. H. Lin, C. C. Kuo, C. H. Hsu, M. O. Eriksson, P. O. Holtz, W. F. Hsieh

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10 Citations (Scopus)

Abstract

We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.

Original languageEnglish
Article number011106
JournalApplied Physics Letters
Volume105
Issue number1
DOIs
Publication statusPublished - 2014 Jul 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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