Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film

S. Yang, Hsu-Cheng Hsu, W. R. Liu, B. H. Lin, C. C. Kuo, C. H. Hsu, M. O. Eriksson, P. O. Holtz, W. F. Hsieh

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.

Original languageEnglish
Article number011106
JournalApplied Physics Letters
Volume105
Issue number1
DOIs
Publication statusPublished - 2014 Jul 7

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crystal defects
excitons
decay
quantum wells
blue shift
spatial distribution
photoluminescence
causes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yang, S. ; Hsu, Hsu-Cheng ; Liu, W. R. ; Lin, B. H. ; Kuo, C. C. ; Hsu, C. H. ; Eriksson, M. O. ; Holtz, P. O. ; Hsieh, W. F. / Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film. In: Applied Physics Letters. 2014 ; Vol. 105, No. 1.
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Yang, S, Hsu, H-C, Liu, WR, Lin, BH, Kuo, CC, Hsu, CH, Eriksson, MO, Holtz, PO & Hsieh, WF 2014, 'Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film', Applied Physics Letters, vol. 105, no. 1, 011106. https://doi.org/10.1063/1.4887280

Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film. / Yang, S.; Hsu, Hsu-Cheng; Liu, W. R.; Lin, B. H.; Kuo, C. C.; Hsu, C. H.; Eriksson, M. O.; Holtz, P. O.; Hsieh, W. F.

In: Applied Physics Letters, Vol. 105, No. 1, 011106, 07.07.2014.

Research output: Contribution to journalArticle

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