Recrystallization of epitaxial GaN under indentation

S. Dhara, C. R. Das, H. C. Hsu, Baldev Raj, A. K. Bhaduri, L. C. Chen, K. H. Chen, S. K. Albert, Ayan Ray

Research output: Contribution to journalArticle

11 Citations (Scopus)


We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation. Hardness value is measured as ∼10 GPa using a Berkovich indenter. "Pop-in" burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2 (high) ∼570 cm-1 in the as-grown epi-GaN is redshifted to stress free value ∼567 cm-1 in the indented region. Evolution of A1 (TO) and E1 (TO) phonon modes are also reported to signify the recrystallization process.

Original languageEnglish
Article number143114
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2008 Apr 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Recrystallization of epitaxial GaN under indentation'. Together they form a unique fingerprint.

  • Cite this

    Dhara, S., Das, C. R., Hsu, H. C., Raj, B., Bhaduri, A. K., Chen, L. C., Chen, K. H., Albert, S. K., & Ray, A. (2008). Recrystallization of epitaxial GaN under indentation. Applied Physics Letters, 92(14), [143114].