Redox-hopping and electrochemical behaviors of metal−organic framework thin films fabricated by various approaches

Cheng Hsun Chuang, Jun Hong Li, Yu Chuan Chen, Yi Sen Wang, Chung Wei Kung

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In this study, spatially dispersed redox-active iridium sites are installed on the nodes of a zirconium-based metal−organic framework (MOF), UiO-66, utilizing a self-limiting solution-phase solvothermal deposition in MOF technique. Thin films of the resulting iridium-decorated UiO-66 are then fabricated on conducting substrates by three distinct approaches: drop-casting, spin-coating, and bottom-up solvothermal methods. The redox-hopping and electrochemical behaviors of the iridium-decorated UiO-66 thin films fabricated by distinct methods are investigated. The findings indicate that the rate of charge hopping in these redox-active MOF thin films is not significantly affected by both the method for fabricating thin films and the film thickness. However, remarkably distinct electrochemical behaviors are observed for the iridium-decorated UiO-66 thin films fabricated by different approaches, which suggests that the approach for fabricating MOF thin films may play an important role in the performances of the targeted electrochemical applications.

Original languageEnglish
Pages (from-to)20854-20863
Number of pages10
JournalJournal of Physical Chemistry C
Volume124
Issue number38
DOIs
Publication statusPublished - 2020 Sep 24

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Fingerprint

Dive into the research topics of 'Redox-hopping and electrochemical behaviors of metal−organic framework thin films fabricated by various approaches'. Together they form a unique fingerprint.

Cite this