In this study, spatially dispersed redox-active iridium sites are installed on the nodes of a zirconium-based metal−organic framework (MOF), UiO-66, utilizing a self-limiting solution-phase solvothermal deposition in MOF technique. Thin films of the resulting iridium-decorated UiO-66 are then fabricated on conducting substrates by three distinct approaches: drop-casting, spin-coating, and bottom-up solvothermal methods. The redox-hopping and electrochemical behaviors of the iridium-decorated UiO-66 thin films fabricated by distinct methods are investigated. The findings indicate that the rate of charge hopping in these redox-active MOF thin films is not significantly affected by both the method for fabricating thin films and the film thickness. However, remarkably distinct electrochemical behaviors are observed for the iridium-decorated UiO-66 thin films fabricated by different approaches, which suggests that the approach for fabricating MOF thin films may play an important role in the performances of the targeted electrochemical applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films