Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing

D. K. Sengupta, T. Horton, W. Fang, A. Curtis, J. Li, S. L. Chuang, H. Chen, M. Feng, G. E. Stillman, A. Kar, J. Mazumder, L. Li, H. C. Liu

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

The effect of laser annealing on important detector characteristics such as dark current, spectral response, and absolute responsivity is investigated for bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetectors (QWIPs) operating in the 8-12 μm wavelength regime. A set of experiments was conducted on QWIPs fabricated from both as-grown and laser-annealed multiple-quantum-well structures. Compared to the as-grown structure, the peak spectral response of the laser-annealed structure was shifted to longer wavelengths, though absolute responsivity was decreased by about a factor of two. In addition, over a wide range of bias levels, the laser-annealed QWIPs exhibited a slightly lower dark current compared to the as-grown QWIPs. Thus, the postgrowth control of GaAs/AlGaAs quantum-well composition profiles by laser annealing offers unique opportunities to fine tune various aspects of a QWIP' s response.

Original languageEnglish
Pages (from-to)3573-3575
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number26
DOIs
Publication statusPublished - 1997 Jun 30

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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