Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

Yeong-Her Wang, K. Tai, Y. F. Hsieh, S. N.G. Chu, J. D. Wynn, M. Hong, R. J. Fischer, A. Y. Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al 0.1 Ga 0.9 As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.

Original languageEnglish
Pages (from-to)1057-1061
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - 1991 May 2

Fingerprint

Distributed Bragg reflectors
Surface emitting lasers
surface emitting lasers
threshold currents
aluminum gallium arsenides
Bragg reflectors
cavities
Substrates
Molecular beam epitaxy
Semiconductor materials
Transmission electron microscopy
molecular beam epitaxy
transmission electron microscopy
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Wang, Yeong-Her ; Tai, K. ; Hsieh, Y. F. ; Chu, S. N.G. ; Wynn, J. D. ; Hong, M. ; Fischer, R. J. ; Cho, A. Y. / Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates. In: Journal of Crystal Growth. 1991 ; Vol. 111, No. 1-4. pp. 1057-1061.
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author = "Yeong-Her Wang and K. Tai and Hsieh, {Y. F.} and Chu, {S. N.G.} and Wynn, {J. D.} and M. Hong and Fischer, {R. J.} and Cho, {A. Y.}",
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Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates. / Wang, Yeong-Her; Tai, K.; Hsieh, Y. F.; Chu, S. N.G.; Wynn, J. D.; Hong, M.; Fischer, R. J.; Cho, A. Y.

In: Journal of Crystal Growth, Vol. 111, No. 1-4, 02.05.1991, p. 1057-1061.

Research output: Contribution to journalArticle

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T1 - Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

AU - Wang, Yeong-Her

AU - Tai, K.

AU - Hsieh, Y. F.

AU - Chu, S. N.G.

AU - Wynn, J. D.

AU - Hong, M.

AU - Fischer, R. J.

AU - Cho, A. Y.

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AB - GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al 0.1 Ga 0.9 As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.

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