Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

Yeong-Her Wang, K. Tai, Y. F. Hsieh, S. N.G. Chu, J. D. Wynn, M. Hong, R. J. Fischer, A. Y. Cho

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al 0.1 Ga 0.9 As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.

Original languageEnglish
Pages (from-to)1057-1061
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - 1991 May 2

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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