Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

Y. H. Wang; K. Tai; Y. F. Hsieh; S. N.G. Chu; J. D. Wynn; M. Hong; R. J. Fischer; A. Y. Cho

doi:10.1016/0022-0248(91)91132-T

Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

Y. H. Wang, K. Tai, Y. F. Hsieh, S. N.G. Chu, J. D. Wynn, M. Hong, R. J. Fischer, A. Y. Cho

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al_0.1Ga_0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.

Original language	English
Pages (from-to)	1057-1061
Number of pages	5
Journal	Journal of Crystal Growth
Volume	111
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)91132-T
Publication status	Published - 1991 May 2

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/0022-0248(91)91132-T

Cite this

@article{38bbe08e4e7a40c1b869c6fb6aa51d19,

title = "Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates",

abstract = "GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.",

author = "Wang, {Y. H.} and K. Tai and Hsieh, {Y. F.} and Chu, {S. N.G.} and Wynn, {J. D.} and M. Hong and Fischer, {R. J.} and Cho, {A. Y.}",

year = "1991",

month = may,

day = "2",

doi = "10.1016/0022-0248(91)91132-T",

language = "English",

volume = "111",

pages = "1057--1061",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

AU - Wang, Y. H.

AU - Tai, K.

AU - Hsieh, Y. F.

AU - Chu, S. N.G.

AU - Wynn, J. D.

AU - Hong, M.

AU - Fischer, R. J.

AU - Cho, A. Y.

PY - 1991/5/2

Y1 - 1991/5/2

N2 - GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.

AB - GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.

UR - http://www.scopus.com/inward/record.url?scp=0026413262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026413262&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(91)91132-T

DO - 10.1016/0022-0248(91)91132-T

M3 - Article

AN - SCOPUS:0026413262

SN - 0022-0248

VL - 111

SP - 1057

EP - 1061

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this