GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al 0.1 Ga 0.9 As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry