GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1991 May 2|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry